ScholarWorks@Dongguk University

Browsing by Ryu, HojeongAuthor

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 19 of 19

SCIESCOPUS
Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structuresopen access

Kim, Byeongjeong; Mahata, Chandreswar; Ryu, Hojeong; Ismail, Muhammad; Yang, Byung-Do; Kim, Sungjun

ArticleIssue Date2021CitationCOATINGS, v.11, no.4PublisherMDPI
SCIESCOPUS
Bias Polarity Dependent Threshold Switching and Bipolar Resistive Switching of TiN/TaOx/ITO Deviceopen access

Ryu, Hojeong; Park, Beomjun; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.10PublisherMDPI
SCIESCOPUS
Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO2-Based RRAMopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.9PublisherMDPI
SCIESCOPUS
Gradually Modified Conductance in the Self-Compliance Region of an Atomic-Layer-Deposited Pt/TiO2/HfAlOx/TiN RRAM Deviceopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.8PublisherMDPI
SCIESCOPUS
Gradually Tunable Conductance in TiO2/Al2O3 Bilayer Resistors for Synaptic Deviceopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.3, pp 1 - 7PublisherMDPI
SCIESCOPUS
Implementation of a reservoir computing system using the short-term effects of Pt/HfO2/TaOx/TiN memristors with self-rectification

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationCHAOS SOLITONS & FRACTALS, v.150PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshootopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.12, pp 1 - 9PublisherMDPI
SCIESCOPUS
Improved Synaptic Device Properties of HfAlOx Dielectric on Highly Doped Silicon Substrate by Partial Reset Processopen access

Kim, Seunghyun; Kwon, Osung; Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.5PublisherMDPI
SCIESCOPUS
Irregular Resistive Switching Behaviors of Al2O3-Based Resistor with Cu Electrodeopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.4PublisherMDPI
SCIESCOPUS
Multi-Level Resistive Switching of Pt/HfO2/TaN Memory Deviceopen access

Ryu, Hojeong; Jung, Hoeje; Lee, Kisong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.12PublisherMDPI
SCIESCOPUS
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemopen access

Park, Jongmin; Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationSCIENTIFIC REPORTS, v.11, no.1PublisherNATURE PORTFOLIO
SCIESCOPUS
Pseudo-Interface Switching of a Two-Terminal TaOx/HfO(2)Synaptic Device for Neuromorphic Applicationsopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.8, pp 1 - 9PublisherMDPI
SCIESCOPUS
Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device

Yang, Jinwoong; Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationCHAOS SOLITONS & FRACTALS, v.145PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

Rasheed, Umbreen; Ryu, Hojeong; Mahata, Chandreswar; Khalil, Rana M. Arif; Imran, Muhammad; Rana, Anwar Manzoor; Kousar, Farhana; Kim, Boram; Kim, Yoon; Cho, Seongjae, et al.

ArticleIssue Date2021CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.877PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Self-Rectifying Resistive Switching and Short-Term Memory Characteristics in Pt/HfO2/TaOx/TiN Artificial Synaptic Deviceopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.11, pp 1 - 9PublisherMDPI
SCIESCOPUS
Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stackopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.10, pp 1 - 11PublisherMDPI
SCIESCOPUS
Tunable Synaptic Characteristics of a Ti/TiO2/Si Memory Device for Reservoir Computing

Yang, Jinwoong; Cho, Hyojong; Ryu, Hojeong; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.28, pp 33244 - 33252PublisherAMER CHEMICAL SOC
SCIESCOPUS
Volatile Resistive Switching Characteristics of Pt/HfO2/TaOx/TiN Short-Term Memory Deviceopen access

Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.8PublisherMDPI
SCIESCOPUS
Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAMopen access

Ryu, Hojeong; Choi, Junhyeok; Kim, Sungjun

ArticleIssue Date2020CitationMETALS, v.10, no.11, pp 1 - 8PublisherMDPI
1
CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114

Copyright(c) 2023 DONGGUK UNIVERSITY. ALL RIGHTS RESERVED.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어