ScholarWorks@Dongguk University: Ismail, Muhammad

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Ismail, Muhammad (이스마일무하마드)

College of Engineering (Department of Electronics and Electrical Engineering)

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Tel 02-2260-1673
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Resistive switching:7||resistive switching:6||Synaptic plasticity:5||neuromorphic system:4||Reservoir computing:4||Neuromorphic computing:4||Analog switching:3||Schottky emission:3||Quantum conductance:3||Electronic synapse:3||Artificial synapse:3||synaptic plasticity:3||Synaptic properties:3||Neuromorphic synapses:2||Neuromorphic systems:2||synaptic devices:2||shortterm plasticity:2||Multilayer memristor:2||longterm potentiation:2||Reactive sputtering:2||VRRAM:2||synaptic device:2||Shortterm and longterm memory:2||neuromorphic computing:2||reservoir computing:2||Memristors:2||resistive randomaccess memory:2||Dielectric study:1||Effect of current compliance limitations:1||Electrical homogeneity:1||Electronic synaps:1||Excitatory postsynaptic current:1||Filamentary conduction:1||Filamentary switching:1||Growth temperature controlled ferroelectric polarization:1||Heterophase Grain Boundaries (GB):1||HfAlO alloy:1||HfO2 switching layer:1||High ON:1||High switching stability:1||Highdensity crossbar array (CBA):1||Highdensity memory:1||Hybrid Nanocomposite (Nc):1||Image memorization:1||Image recognition:1||Impact of active electrodes:1||InGaZnO memristor:1||Incorporated SnO2 layer:1||Interface engineering:1||Iron Oxide (Fe3O4):1||Large memory window:1||Lowk dielectric:1||Magnetism:1||Memristor:1||Multilayer structure:1||Multilevel conductance:1||Multilevel conductance properties:1||Multilevel resistance states:1||Multilevel switching:1||Nanocrystalline ZnO film:1||NanocrystallineHfO2:1||Neural network:1||Neuromorphic system:1||Nickel ferrites thin films:1||Nitrogen doping:1||Nonvolatile memory:1||OFF ratio:1||Optical property:1||Optically stimulated memory:1||Oxygen vacancy:1||Pairedpulse depression:1||RESETstop voltage:1||RRAM:1||RRAM memristive devices:1||RRAM memristor:1||STDP:1||Selfrectifying nonvolatile memory:1||SiO2 interface layer:1||SolGel:1||Spikeratedependent plasticity:1||Spikingratedependent plasticity:1||Surface plasmon resonance effect:1||Synaptic device:1||Ta2O5 barrier layer:1||Ta2O5/ZrO2 bilayer film:1||TaOx RRAM:1||TaOx bilayer:1||Temporal dynamics:1||Threshold switching:1||Ti buffer layer:1||TiN nanocrystal:1||TiO2/HfO2 film:1||Topological insulator:1||Transparent RRAM:1||Transparent memory:1||Tungsten disulphide (WS2):1||Twodimensional PdSe2:1||Wdoped ITO electrode:1||WOx:1||Wearable electronics:1||Xray photoelectron spectroscopy:1||ZnO:1||ZnO film:1||ZnOtransparent RRAM:1||ZrO2 resistive switching layer:1||aHfSiOx film:1||alloying:1||artificial intelligence:1||artificial synapses:1||bilayer memristors:1||boron nitride:1||capping layers:1||controllable conductance:1||embedded localized Au nanoparticles:1||filamentary mechanisms:1||gradual resistive switching:1||lowpower:1||memristor:1||metaplasticity:1||multilevel datastorage memory:1||multilevel resistance states:1||neural network simulation:1||neuromorphic:1||neuromorphic learning systems:1||resistive memory:1||selfrectification:1||shortterm memory:1||silicon nitride:1||spikeratedependent plasticity:1||switching layers:1||symmetric and asymmetric electrodes:1||tin oxide:1||vectormatrix multiplication:1||AC impedance:1||vertical resistive randomaccess memory:1||ALD Ptnanoparticles:1||ALD TaNnanoparticles:1||ALD TiNnanoparticles:1||Aldoped HfO2:1||Al2O3 bilayer:1||Al2O3 redox layer:1||Analog switching behavior:1||Analog tunable switching:1||Annealing:1||Artificial learning:1||Artificial neural network:1||Au nanoparticles decoration:1||BaTiO<sub>3</sub>/ZnO heterojunction:1||Barrier layer thickness:1||Bi2Se3:1||Bilayer memristors:1||Biological synapse:1||Biotic functions:1||Bipolar RS switching:1||CNN:1||CeO<sub>2</sub>:1||Charge trapping:1||Complementary resistive switching:1||Conductivity:1||Convolutional neural network:1||Crossbararray memristive device:1||

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