ScholarWorks@Dongguk University: Kim, Sung jun

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Kim, Sung jun (김성준)

College of Engineering (Department of Electronics and Electrical Engineering)

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Tel 02-2260-3332
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resistive switching:49||memristor:33||Resistive switching:28||neuromorphic system:27||Memristor:21||synaptic device:21||reservoir computing:20||RRAM:19||Reservoir computing:17||neuromorphic computing:16||Neuromorphic system:15||Synaptic device:12||Neuromorphic computing:11||shortterm memory:9||Shortterm memory:8||synaptic plasticity:8||Synaptic plasticity:8||Neuromorphic:8||metal oxides:7||artificial synapse:6||silicon nitride:6||Switches:6||Synaptic properties:6||synapse device:5||Memristors:5||ZnO:5||XPS:5||synaptic devices:5||threshold switching:5||spiketimingdependent plasticity:5||Artificial synapse:4||Schottky emission:4||Associative learning:4||selfcompliance:4||conduction mechanism:4||shortterm plasticity:4||Xray photoelectron spectroscopy:4||neural network:4||Silicon:4||bilayer:4||HfO2:4||neuromorphic:4||resistive randomaccess memory:4||Synapses:4||nociceptor:3||Silicon nitride:3||silicon oxide:3||Analog switching:3||IGZO:3||boron nitride:3||tungsten oxide:3||Aldoped HfO2:3||Resistive randomaccess memory:3||Neural network:3||Nociceptor:3||Electronic synapse:3||spiking neural network:3||Artificial neural network:3||Crossbar array:3||longterm potentiation:3||Multilevel conductance:3||Quantum conductance:3||Ferroelectric tunnel junction:2||vertical resistive randomaccess memory:2||ALD TiNnanoparticles:2||volatile memristor:2||associative learning:2||ferroelectric tunnel junctions:2||Synapse array:2||Synaptic devices:2||Bipolar:2||nanowedge:2||Synaptic transistor:2||TBmBJ:2||Edge computing:2||neuromorphic simulation:2||Highdensity memory:2||niobium oxide:2||TaOx:2||nonlinearity:2||Al2O3:2||Reactive sputtering:2||crossbar array:2||CBRAM:2||Neuromorphic simulation:2||Neuromorphic synapses:2||density function theory:2||depression:2||Threshold switching:2||Reservoir computing system:2||Neuromorphic systems:2||pairedpulse facilitation:2||electrical characteristics:2||Neuromorphics:2||plasma treatment:2||potentiation:2||Resistive switching device:2||ITO electrode:2||Transparent memory:2||ferroelectric:2||Convolutional neural network:2||ferroelectric memories:2||STDP:2||ferroelectric thinfilm transistor:2||atomristor:2||VRRAM:2||Nonvolatile memory:2||Image recognition:2||Volatile memristor:2||selector:2||Electrodes:2||selfrectifying:2||Selfrectification:2||spikeratedependent plasticity:2||Onreceptor computing:2||Shortterm and longterm memory:2||Endurance:2||inmemory computing:2||indium gallium zinc oxide:2||DFT:2||AI semiconductor:2||Multilayer memristor:2||Artificial nociceptor:2||thermal treatment:2||Ferroelectric:2||artificial synapses:2||Biological synapse:2||Indiumgalliumzinc oxide:2||memristors:2||Metalinsulatorsemiconductor:1||Micromechanical devices:1||Molybdenum disulfide:1||Monte Carlo simulation:1||Multi level cell:1||Multilayer structure:1||Multilevel conductance properties:1||Multilevel resistance states:1||Multilevel resistive switching:1||Multilevel switching:1||Multiple states:1||Nanocrystalline ZnO film:1||NanocrystallineHfO2:1||Nanoscale devices:1||Negative set:1||Neural network simulation:1||Neural network, resistiveswitching device:1||Neuromorphic device:1||Neuromorphic engineering:1||Neurons:1||Nickel alloys:1||Nitrogen doping:1||Nonequilibrium stochastic multistable system:1||OFF ratio:1||OTS:1||Offline learning:1||Onchip learning:1||Onchip training:1||Optical conductivity:1||Optical reservoir computing:1||Optical response:1||Optically stimulated memory:1||Optimization:1||Optoelectronic artificial synapse:1||Optoelectronic devices:1||Oxygen gradient:1||Oxygen vacancy:1||Pn heterojunction:1||PDOS:1||Pairedpulse depression:1||Pavlovian conditioning:1||Perovskite:1||Plasmas:1||Post microwave treatment:1||Potentiation:1||Quantized conductance:1||RBM:1||RESETstop voltage:1||RRAM devices:1||RRAM memristive devices:1||RRAM memristor:1||Random access memory:1||Readout process:1||Rectification characteristics:1||Reliability:1||Reservoirs:1||Resistive memory:1||Resistive random access memory:1||Resistive switching, neuromorphic:1||SOI technology:1||SRDP:1||Schottky barrier effect:1||Schottky diode:1||Schottky diodes:1||Schottky emission conduction:1||Schottky junction:1||Selector:1||Semiconducting materials:1||Semiconductor device measurement:1||Sensory memory:1||Sirich nitride (SiNx):1||SiO2 interface layer:1||Silicidation:1||Silicides:1||SnOx:1||SnO2:1||Sneak path current:1||Solgel process:1||Spike firing:1||Spike plasticity:1||Spikerate dependent plasticity:1||Spikeratedependent plasticity:1||Spiketimingdependent plasticity (STDP):1||Spikingratedependent plasticity:1||Sputtering:1||Stoichiometry:1||Synaptic diode:1||Synaptic memristor:1||Synapticdevice:1||TDOS:1||TMAH:1||Ta2O5 barrier layer:1||Ta2O5/ZrO2 bilayer film:1||TaON:1||TaOx RRAM:1||TaOx bilayer:1||Temporal dynamics:1||Theoretical work:1||Thermal conductivity:1||Thermoelectric:1||Threedimensional displays:1||Ti buffer layer:1||TiN nanocrystal:1||TiO2:1||TiO2/HfO2 film:1||TiOx:1||Tin:1||Titanium oxide:1||Transparent RRAM:1||Transparent electrode:1||Transparent synaptic devices:1||Tungsten disulphide (WS2):1||Twodimensional PdSe2:1||Valence change memory:1||Vertical resistive randomaccess memory:1||Voltage control:1||Wdoped ITO electrode:1||WOx:1||Wearable electronics:1||Working pressure in sputtering:1||Zinc:1||ZnO film:1||ZnOtransparent RRAM:1||ZrOx:1||ZrO2 resistive switching layer:1||ZrO2 thin film:1||ZrO2/ZTO memristor:1||aHfSiOx film:1||alloyed materials:1||alloying:1||aluminum nitride:1||amorphous boron nitride:1||amorphousInGaZnO:1||annealing:1||array:1||artificial intelligence:1||artificial neural network (ANN):1||artificial neuralnetworks:1||artificial sensory system:1||artificial synaptic array:1||artificial synaptic device:1||artificial synaptic devices:1||associative conditioning:1||atomic layer deposition:1||bilayer memristors:1||bilayer stack:1||bimodal operation:1||bipolar analog resistiveswitching characteristics:1||capacitorlessdynamic randomaccess memory:1||capping layers:1||cationcomposition ratio:1||cerium oxide:1||channel length:1||charge trap memory:1||charge trapping:1||cobalt:1||compact modeling:1||complementary resistive switching:1||complementary resistiveswitching characteristics:1||conductive bridging RAM:1||conductive filaments:1||controllable conductance:1||crosspoint array:1||crosspoint array architecture:1||current overshoot:1||current sweep:1||degradation:1||depolarization field:1||dielectric:1||dynamic:1||dynamic memristor:1||edge computing:1||electrochemical cell:1||electronic synaptic devices:1||embedded localized Au nanoparticles:1||emerging memory:1||excitatory postsynaptic current:1||fasttransient drain currents:1||fear conditioning:1||ferroelectric capacitor:1||ferroelectric memory:1||ferroelectric tunnel junction:1||ferroelectricswitching:1||fieldeffecttransistors:1||filamentary mechanisms:1||frequency noise:1||frequencydependent switching neuromorphic applications:1||gradual resistive switching:1||gradualswitching:1||hafnia:1||hafnia ferroelectricity:1||hafnium oxide:1||hardwaredriven artificial intelligence:1||hardwaredriven neuromorphic system:1||heterostructure:1||hexagonal boron nitride:1||high&#954:1||highk:1||homogeneous resistive switching:1||hybrid photonicelectronic systems:1||image memorization:1||indium tin oxide:1||indium zinc oxide:1||interfacial layer (IL):1||interfacial passivation:1||interlayer:1||laser treatment:1||longshortterm memory:1||longterm memory:1||low and high current:1||low power consumption:1||lowfrequency noise:1||lowpower:1||lowpower devices:1||memory device:1||memorydevices:1||memristor array:1||metal nitride:1||metal oxide:1||metaltoinsulator transition:1||metaplasticity:1||microstructures:1||molybdenumdisulfide:1||morse code:1||multifunction:1||multilevel conductance:1||multilevel datastorage memory:1||multilevel memory:1||multilevel resistance states:1||nanowedge resistive random access memory (RRAM):1||negative Set behavior:1||nervous system:1||neural network simulation:1||neural networks:1||neuromorphic application:1||neuromorphic device:1||neuromorphic engineering:1||neuromorphic learning systems:1||neuromorphic systems:1||nickel silicidation:1||nitrogen doping:1||noise power spectral density???????:1||number recognition system:1||onreceptor computing:1||one selectorone memory:1||online/offline learning:1||optical measurements:1||optoelectronic devices:1||optoelectronic synaptic transistor:1||overshoot suppressed RRAM:1||overshoot suppressed layer:1||oxide semiconductors:1||oxygen flow rate:1||oxygen ion reservoir:1||oxygen plasma treatment:1||pn Junction:1||parallel computation:1||photodetectors:1||programmable retention:1||quantum dot:1||reactive sputtering:1||read margin:1||redox reaction:1||reservoir computing (RC):1||reservoir computing system:1||reset breakdown:1||resistive RAM:1||resistive RAM (RRAM):1||resistive memory:1||resistive random access memory (RRAM):1||resistive switching (RS):1||resistive switching failure:1||resistive switching memory:1||resistive switching randomaccess memory:1||resistiveswitching random access memory (RRAM):1||resistiveswitching randomaccess memory (RRAM):1||selfaligned insulator:1||selfrectification:1||selfrectifying cell:1||shortterm memory (STM):1||silver:1||silver metal electrode:1||sneak current:1||spike numberdependent plasticity:1||spike ratedependent plasticity:1||spiketime dependent plasticity:1||static:1||stochastic neuron:1||switching layer:1||switching layers:1||switching mechanism:1||switching process:1||symmetric and asymmetric electrodes:1||synapse:1||synapse emulation:1||synaptic application:1||synaptic array:1||synaptic functions:1||synaptic properties:1||systemlevel simulation:1||tantalum oxide:1||thermal recovery:1||threeterminal device:1||tin oxide:1||titanium dioxide:1||transparent electrode:1||transparent resistive randomaccess memory:1||twotransistor DRAM:1||variability:1||vectormatrix multiplication:1||vertical RRAM:1||vertical resistive memory:1||volatile and nonvolatile resistiveswitching coexistence:1||weight transfer:1||zinc tin oxide:1||1/f noise:1||zirconium nitride:1||1D1R:1||1S1R:1||25% tetramethylammonium hydroxide (TMAH):1||2D material:1||3D integration:1||3D vertical memory:1||ALD Ptnanoparticles:1||ALD TaNnanoparticles:1||ALD ZnO:1||Ag:1||Al concentration:1||Al concentrations:1||Aldoped hafnium oxide:1||Al/aTiO(x/)Al:1||Al2O3 bilayer:1||Al2O3 redox layer:1||AlN:1||Aluminumzinc oxide (ZO):1||AmorphousZTO layer:1||Analog switching behavior:1||Analog tunable switching:1||Annealing:1||Applied computing:1||Arsenicdangling bond passivation:1||Artificial learning:1||Artificial synapses:1||Bandgap:1||Barium oxide:1||Barium titanate:1||Barrier layer thickness:1||Bilayer HfO2/ZrO2 structure:1||Bilayer device:1||Bilayer memristors:1||Biotic functions:1||Bipolar RS switching:1||Boltztrap:1||CNN:1||Cebased device:1||CeO2:1||Charge trap layer:1||Charge trapping:1||Cognitive learning:1||Color image classification:1||Complementary resistive switching:1||Conductance quantization:1||Conducting filament:1||Conductive bridge random access memory:1||Conductivity:1||Crossbararray memristive device:1||DOS,CFs:1||Density functional theory:1||Densityfunctional theory:1||Depression:1||Dopant:1||Doping:1||Dual bipolar resistive switching behavior:1||Dynamic memristor:1||EPSC:1||Effect of current compliance limitations:1||Electrical characteristics:1||Electrical homogeneity:1||Electronic synaps:1||Energy barrier height:1||Engineering:1||Excitatory postsynaptic current:1||FN tunneling:1||FTJ:1||Fabrication:1||Ferroelectric capacitor:1||Ferroelectric fieldeffect transistor:1||Ferroelectric tunnel junctions:1||Filamentary RRAM:1||Filamentary conduction:1||Filamentary switching:1||GaAshighk:1||Gibbs free energy:1||HZO:1||Hafnium zirconium oxide:1||Hardware:1||Hebbian learning rule:1||Hebbian learning rules:1||Heterojunction:1||Heterophase Grain Boundaries (GB):1||HfAlO alloy:1||Hf0.5Zr0.5O2:1||HfAlO:1||HfAlOxbased memristor:1||HfO2 dielectric layer:1||HfO2 switching layer:1||HfO2 trilayer RRAM:1||HfO2/Al2O3:1||HfTiO2 alloy:1||High ON:1||High bit reservoir computing:1||High switching stability:1||Highk:1||Hybrid Nanocomposite (Nc):1||Image memorization:1||Immune system:1||Impact of active electrodes:1||Improved endurance performance:1||InGaZnO:1||Inmemory computing:1||InGaZnO:1||InGaZnO memristor:1||InP:1||InZnO:1||Incorporated SnO2 layer:1||Incremental step pulse with verify algorithm:1||Indium gallium zinc oxide:1||Indium tin oxide:1||Indium tin oxide (ITO) film:1||Integrated circuit modeling:1||Interface engineering:1||Interfacial RRAM:1||Interlayer engineering:1||Intrinsic defects:1||Iron Oxide (Fe3O4):1||Isosurface charge density:1||Large memory window:1||Lead zirconate titanate:1||Logicinmemory:1||Longterm memory:1||Low:1||Lowk dielectric:1||MLC:1||MNIST:1||Metal electrode:1||

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