ScholarWorks@Dongguk University: Mahata, Chandreswar

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Mahata, Chandreswar (찬드레스워마하타)

College of Engineering (Department of Electronics and Electrical Engineering)

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Resistive switching:7||Synaptic plasticity:5||resistive switching:5||neuromorphic system:4||Synaptic properties:4||Reservoir computing:4||Analog switching:3||Neuromorphic computing:3||Quantum conductance:3||Memristors:3||reservoir computing:3||RRAM:3||resistive randomaccess memory:3||shortterm plasticity:3||Schottky emission:3||longterm potentiation:3||synaptic plasticity:3||Electronic synapse:3||GGA plus U:2||ALD TiNnanoparticles:2||Neuromorphic synapses:2||VRRAM:2||Memristor:2||pairedpulse facilitation:2||Multilayer memristor:2||spikeratedependent plasticity:2||Aldoped HfO2:2||Shortterm and longterm memory:2||Neuromorphic systems:2||Reactive sputtering:2||ZnO:2||Artificial synapse:2||neuromorphic computing:2||Highdensity memory:1||Image memorization:1||Image recognition:1||Impact of active electrodes:1||InGaZnO:1||InGaZnO memristor:1||Incorporated SnO2 layer:1||Interface engineering:1||Intrinsic defects:1||Large memory window:1||Lowk dielectric:1||Multilayer structure:1||Multilevel conductance:1||Multilevel conductance properties:1||Multilevel resistance states:1||Multilevel switching:1||Nanocrystalline ZnO film:1||NanocrystallineHfO2:1||Neuromorphic device:1||Neuromorphic system:1||Nitrogen doping:1||Nonvolatile memory:1||OFF ratio:1||Optical response:1||Optically stimulated memory:1||Oxygen vacancy:1||Pairedpulse depression:1||Polarons:1||RESETstop voltage:1||Resistive switching, neuromorphic:1||STDP:1||Shortterm memory:1||SiO2 interface layer:1||Spikeratedependent plasticity:1||Spikingratedependent plasticity:1||Ta2O5 barrier layer:1||Ta2O5/ZrO2 bilayer film:1||TaOx RRAM:1||TaOx bilayer:1||Temporal dynamics:1||Theoretical work:1||Threshold switching:1||Ti buffer layer:1||TiN nanocrystal:1||TiO2/HfO2 film:1||Transparent RRAM:1||Twodimensional PdSe2:1||Wdoped ITO electrode:1||WOx:1||Wearable electronics:1||XPS:1||ZnO film:1||ZnOtransparent RRAM:1||ZrO2 resistive switching layer:1||aHfSiOx film:1||alloying:1||artificial intelligence:1||artificial synapses:1||bilayer memristors:1||blockchain:1||boron nitride:1||charge trapping:1||chargetransfer layer:1||circular economy:1||circular premium:1||controllable conductance:1||cupric oxide (CuO):1||digital badge:1||embedded localized Au nanoparticles:1||excitatory postsynaptic current:1||gradual resistive switching:1||graphene:1||hydrogen (H2):1||indium zinc oxide:1||lowpower:1||machine learning:1||memristor:1||metaplasticity:1||multilevel datastorage memory:1||multilevel memory:1||multilevel resistance states:1||neuromorphic:1||optical measurements:1||photocathode:1||photoelectrochemical (PEC):1||plastic recycling:1||reservoir computing system:1||resistive memory:1||selfrectification:1||shortterm memory:1||silicon nitride:1||spike numberdependent plasticity:1||spike ratedependent plasticity:1||spiking neural network:1||stability:1||supply chain:1||synaptic device:1||synaptic devices:1||tin oxide:1||vectormatrix multiplication:1||ALD Ptnanoparticles:1||vertical resistive randomaccess memory:1||ALD TaNnanoparticles:1||Al2O3 bilayer:1||Al2O3 redox layer:1||Analog switching behavior:1||Analog tunable switching:1||Arsenicdangling bond passivation:1||Artificial neural network:1||Barrier layer thickness:1||Bilayer memristors:1||Biological synapse:1||CNN:1||Charge states:1||Charge trapping:1||Complementary resistive switching:1||Conducting filaments:1||Convolutional neural network:1||Crossbararray memristive device:1||Densityfunctional theory:1||Effect of current compliance limitations:1||Electrical homogeneity:1||Electronic properties:1||Electronic synaps:1||Excitatory postsynaptic current:1||Filamentary switching:1||Formation energy:1||GaAshighk:1||HfAlO alloy:1||HfO2:1||HfO2 switching layer:1||HfTiO2 alloy:1||High ON:1||High switching stability:1||

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