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Showing results 1 to 16 of 16

SCIESCOPUS
Bipolar Switching Characteristics of Transparent WOx-Based RRAM for Synaptic Application and Neuromorphic Engineeringopen access

Kim, Jihyung; Park, Jongmin; Kim, Sungjun

ArticleIssue Date2022CitationMaterials, v.15, no.20, pp 1 - 8PublisherMDPI
SCIESCOPUS
Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN deviceopen access

Yun, Seokyeon; Park, Jongmin; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationResults in Physics, v.34, pp 1 - 6PublisherElsevier BV
SCIESCOPUS
Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systemsopen access

Park, Minsu; Park, Jongmin; Kim, Sungjun

ArticleIssue Date2022CitationJournal of Alloys and Compounds, v.903, pp 1 - 8PublisherELSEVIER
SCIESCOPUS
Conductance Quantization Behavior in Pt/SiN/TaN RRAM Device for Multilevel Cellopen access

Park, Jongmin; Lee, Seungwook; Lee, Kisong; Kim, Sungjun

ArticleIssue Date2021CitationMETALS, v.11, no.12PublisherMDPI
SCIESCOPUS
Demonstration of electronic and optical synaptic properties modulation of reactively sputtered zinc-oxide-based artificial synapsesopen access

Mahata, Chandreswar; Park, Jongmin; Ismail, Muhammad; Kim, Sungjun

ArticleIssue Date2023CitationJournal of Alloys and Compounds, v.938, pp 1 - 13PublisherElsevier B.V.
SCIESCOPUS
Dynamic and Static Switching in ITO/SnOx/ITO and Its Synaptic Applicationopen access

Park, Jongmin; Park, Hyunwoong; Chung, Daewon; Kim, Sungjun

ArticleIssue Date2022CitationInternational Journal of Molecular Sciences, v.23, no.17, pp 1 - 7PublisherMDPI
SCIESCOPUS
Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Processopen access

Yang, Seyeong; Park, Jongmin; Cho, Youngboo; Lee, Yunseok; Kim, Sungjun

ArticleIssue Date2022CitationInternational Journal of Molecular Sciences, v.23, no.21, pp 1 - 9PublisherMDPI
SCIESCOPUS
Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM

Park, Jongmin; Kim, Tae-Hyeon; Kwon, Osung; Ismail, Muhammad; Mahata, Chandreswar; Kim, Yoon; Kim, Sangbum; Kim, Sungjun

ArticleIssue Date2022CitationNano Energy, v.104, pp 1 - 10PublisherElsevier BV
SCIESCOPUS
Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al2O3 Bilayer Structureopen access

Mahata, Chandreswar; Park, Jongmin; Ismail, Muhammad; Kim, Dae Hwan; Kim, Sungjun

ArticleIssue Date2022CitationMaterials, v.15, no.19, pp 1 - 11PublisherMDPI
SCIESCOPUS
Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAMopen access

Park, Jongmin; Kim, Sungjun

ArticleIssue Date2022CitationResults in Physics, v.39, pp 1 - 7PublisherELSEVIER
SCIESCOPUS
Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO2/TaOx/TaN Devicesopen access

Park, Minsu; Jeon, Beomki; Park, Jongmin; Kim, Sungjun

ArticleIssue Date2022CitationNanomaterials, v.12, no.23, pp 1 - 9PublisherMDPI
SCIESCOPUS
Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic Systemopen access

Lee, Yunseok; Park, Jongmin; Chung, Daewon; Lee, Kisong; Kim, Sungjun

ArticleIssue Date2022CitationNanoscale Research Letters, v.17, no.1, pp 1 - 10PublisherSpringer Science+Business Media
SCIESCOPUS
Nonideal resistive and synaptic characteristics in Ag/ZnO/TiN device for neuromorphic systemopen access

Park, Jongmin; Ryu, Hojeong; Kim, Sungjun

ArticleIssue Date2021CitationSCIENTIFIC REPORTS, v.11, no.1PublisherNATURE PORTFOLIO
SCIESCOPUS
Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

Chung, Woochan; Kim, Doohyung; Kim, Juri; Park, Jongmin; Kim, Sungjun; Lee, Sejoon

ArticleIssue Date2025CitationJournal of Materials Science & Technology, v.218, pp 25 - 34PublisherElsevier Ltd
SCIESCOPUS
Recent advances in the mechanism, properties, and applications of hafnia ferroelectric tunnel junctions

Lim, Eunjin; Kim, Dahye; Park, Jongmin; Koo, Minsuk; Kim, Sungjun

ArticleIssue Date2024CitationJournal of Physics D: Applied Physics, v.57, no.47, pp 1 - 18PublisherIOP Publishing Ltd.
SCIESCOPUS
Transformed Filaments by Oxygen Plasma Treatment and Improved Resistance Stateopen access

Park, Jongmin; Choi, Jungwhan; Chung, Daewon; Kim, Sungjun

ArticleIssue Date2022CitationNanomaterials, v.12, no.15, pp 1 - 8PublisherMDPI
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