Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

Abstract

To present an advanced device scheme of high-performance optoelectronic synapses, herein, we demonstrated the electrically- and/or optically-drivable multifaceted synaptic capabilities on the 2D semiconductor channel-based ferroelectric field-effect transistor (FeFET) architecture. The device was fabricated in the form of the MoS2 /PZT FeFET, and its synaptic weights were effectively controlled by dual stimuli ( i.e ., both electrical and optical pulses simultaneously) as well as single stimuli ( i.e ., either electrical or optical pulses alone). This could be attributed to the electrical pulse-tunable strong ferroelectric polarization in PbZrx Ti1-x O3 (PZT) as well as the polarization field-enhanced persistent photoconductivity effect in MoS2 . Additionally, it was confirmed that the proposed device possesses substantial activity, achieving approximately 95 % pattern recognition accuracy. The results substantiate the great potential of the 2D semiconductor channel-based FeFET device as a high-performance optoelectronic synaptic platform, marking a pivotal stride towards the realization of advanced neuromorphic computing systems. (c) 2024 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.