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Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOx/TaN Memristorsopen access

Cho, Youngboo; Kim, Jihyung; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationMaterials, v.16, no.4, pp 1 - 9PublisherMDPI
SCIESCOPUS
Bipolar Switching Characteristics of Transparent WOx-Based RRAM for Synaptic Application and Neuromorphic Engineeringopen access

Kim, Jihyung; Park, Jongmin; Kim, Sungjun

ArticleIssue Date2022CitationMaterials, v.15, no.20, pp 1 - 8PublisherMDPI
SCIESCOPUS
Effect of Al Concentration on Ferroelectric Properties in HfAlOx-Based Ferroelectric Tunnel Junction Devices for Neuroinspired Applicationsopen access

Kim, Jihyung; Kim, Dahye; Min, Kyung Kyu; Kraatz, Matthias; Han, Taeyoung; Kim, Sungjun

ArticleIssue Date2023CitationAdvanced Intelligent Systems, v.5, no.8PublisherWiley-VCH GmbH
SCIESCOPUS
Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic systemopen access

Park, Yongjin; Kim, Jihyung; Kim, Sunghun; Kim, Dahye; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2023CitationJournal of Materials Chemistry C, v.11, no.40, pp 13886 - 13896PublisherRoyal Society of Chemistry
SCIESCOPUS
Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Dopingopen access

Kim, Doohyung; Kim, Jihyung; Kim, Sungjun

ArticleIssue Date2022CitationNanomaterials, v.12, no.19, pp 1 - 9PublisherMDPI
SCIESCOPUS
Ferroelectric synaptic devices based on CMOS-compatible HfAlOx for neuromorphic and reservoir computing applicationsopen access

Kim, Dahye; Kim, Jihyung; Yun, Seokyeon; Lee, Jungwoo; Seo, Euncho; Kim, Sungjun

ArticleIssue Date2023CitationNanoscale, v.15, no.18, pp 8366 - 8376PublisherRoyal Society of Chemistry
SCIESCOPUS
Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfOx tunnel junction memoryopen access

Kim, Jihyung; Kwon, Osung; Lim, Eunjin; Kim, Dahye; Kim, Sungjun

ArticleIssue Date2023CitationPhysical Chemistry Chemical Physics, v.25, no.6, pp 4588 - 4597PublisherRoyal Society of Chemistry
SCIESCOPUS
Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarizationopen access

Kim, Sunghun; Kim, Juri; Kim, Dahye; Kim, Jihyung; Kim, Sungjun

ArticleIssue Date2023CitationAPL Materials, v.11, no.10, pp 1 - 10PublisherAIP Publishing
SCIESCOPUS
Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Lee, Yoonseok; Jeon, Beomki; Cho, Youngboo; Kim, Jihyung; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2025CitationAdvanced Materials Technologies, v.10, no.4, pp 1 - 17PublisherWiley-VCH GmbH
SCIESCOPUS
Synaptic Characteristics and Vector-Matrix Multiplication Operation in Highly Uniform and Cost-Effective Four-Layer Vertical RRAM Array

Kim, Jihyung; Lee, Subaek; Kim, Sungjoon; Yang, Seyoung; Lee, Jung-Kyu; Kim, Tae-Hyeon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Yoon; Choi, Woo Young, et al.

ArticleIssue Date2024CitationAdvanced Functional Materials, v.34, no.8PublisherWiley-VCH GmbH
SCIESCOPUS
Temporal data learning of ferroelectric HfAlOx capacitors for reservoir computing system

Lee, Jungwoo; Lee, Seungjun; Kim, Jihyung; Emelyanov, Andrey; Kim, Sungjun

ArticleIssue Date2024CitationJournal of Alloys and Compounds, v.990, pp 1 - 11PublisherElsevier BV
SCIESCOPUS
Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineeringopen access

Kim, Jihyung; Choi, Jin Hyeong; Kim, Sunghun; Choi, Changsoon; Kim, Sungjun

ArticleIssue Date2023CitationCarbon, v.215, pp 1 - 10PublisherElsevier Ltd
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