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Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOx/TaN Memristorsopen access
- Authors
- Cho, Youngboo; Kim, Jihyung; Kang, Myounggon; Kim, Sungjun
- Issue Date
- Feb-2023
- Publisher
- MDPI
- Keywords
- memristor; reactive sputtering; tungsten oxide; artificial synaptic devices; neuromorphic computing
- Citation
- Materials, v.16, no.4, pp 1 - 9
- Pages
- 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials
- Volume
- 16
- Number
- 4
- Start Page
- 1
- End Page
- 9
- ISSN
- 1996-1944
1996-1944
- Abstract
- In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10(4) cycles), a high on/off ratio (>10), and long retention (>10(4) s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory.
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)