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Cited 11 time in 
Cited 11 time in
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Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOx/TaN Memristors
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Youngboo | - |
| dc.contributor.author | Kim, Jihyung | - |
| dc.contributor.author | Kang, Myounggon | - |
| dc.contributor.author | Kim, Sungjun | - |
| dc.date.accessioned | 2024-08-08T08:31:00Z | - |
| dc.date.available | 2024-08-08T08:31:00Z | - |
| dc.date.issued | 2023-02 | - |
| dc.identifier.issn | 1996-1944 | - |
| dc.identifier.issn | 1996-1944 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/20479 | - |
| dc.description.abstract | In this work, we fabricated an ITO/WOX/TaN memristor device by reactive sputtering to investigate resistive switching and conduct analog resistive switching to implement artificial synaptic devices. The device showed good pulse endurance (10(4) cycles), a high on/off ratio (>10), and long retention (>10(4) s) at room temperature. The conduction mechanism could be explained by Schottky emission conduction. Further, the resistive switching characteristics were performed by additional pulse-signal-based experiments for more practical operation. Lastly, the potentiation/depression characteristics were examined for 10 cycles. The results thus indicate that the WOX-based devices are appropriate candidates for synaptic devices as well as next-generation nonvolatile memory. | - |
| dc.format.extent | 9 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | MDPI | - |
| dc.title | Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOx/TaN Memristors | - |
| dc.type | Article | - |
| dc.publisher.location | 스위스 | - |
| dc.identifier.doi | 10.3390/ma16041687 | - |
| dc.identifier.scopusid | 2-s2.0-85149237750 | - |
| dc.identifier.wosid | 000940578000001 | - |
| dc.identifier.bibliographicCitation | Materials, v.16, no.4, pp 1 - 9 | - |
| dc.citation.title | Materials | - |
| dc.citation.volume | 16 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 9 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | Y | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | RRAM DEVICES | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordAuthor | memristor | - |
| dc.subject.keywordAuthor | reactive sputtering | - |
| dc.subject.keywordAuthor | tungsten oxide | - |
| dc.subject.keywordAuthor | artificial synaptic devices | - |
| dc.subject.keywordAuthor | neuromorphic computing | - |
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)