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SCIESCOPUS
Analog switching and retention modulation in stack-designed InGaZnO memristors for neuromorphic systemsopen access

Myoung, Seung Joo; Shin, Dong Hyeop; Cho, Jung Rae; Kim, Seungki; Jeon, Seong Hoon; Kim, Wonjung; Lee, Jungwoo; Kim, Changwook; Bae, Jong-Ho; Choi, Sung-Jin, et al.

ArticleIssue Date2025CitationMaterials Science in Semiconductor Processing, v.199, pp 1 - 13PublisherElsevier Ltd
SCIESCOPUS
Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistorsopen access

Kim, Donguk; Lee, Dayeon; Kim, Wonjung; Lee, Ho Jung; Kim, Changwook; Lee, Kwang-Hee; Jung, Moonil; Yang, Jee-Eun; Jang, Younjin; Kim, Sungjun, et al.

ArticleIssue Date2024CitationScientific Reports, v.14, no.1PublisherNature Portfolio
SCIESCOPUS
Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Contentopen access

Kim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan

ArticleIssue Date2022CitationMicromachines, v.13, no.10, pp 1 - 13PublisherMDPI
SCIESCOPUS
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristorsopen access

Lee, Hee Jun; Kim, Donguk; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan

ArticleIssue Date2023CitationMaterials Science in Semiconductor Processing, v.153, pp 1 - 7PublisherElsevier Ltd.
SCIESCOPUS
Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristorsopen access

Kim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan

ArticleIssue Date2022CitationNanomaterials, v.12, no.20, pp 1 - 13PublisherMDPI
SCIESCOPUS
Improved Resistive Switching with Low-Power Synaptic Behaviors of ZnO/Al2O3 Bilayer Structureopen access

Mahata, Chandreswar; Park, Jongmin; Ismail, Muhammad; Kim, Dae Hwan; Kim, Sungjun

ArticleIssue Date2022CitationMaterials, v.15, no.19, pp 1 - 11PublisherMDPI
SCISCIESCOPUS
Investigation on mechanism for instability under drain current stress in amorphous Si-In-Zn-O thin-film transistors

Kim, Do Hyung; Jung, Hyun Kwang; Yang, Woochul; Kim, Dae Hwan; Lee, Sang Yeol

ArticleIssue Date2013CitationTHIN SOLID FILMS, v.527, pp 314 - 317PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Modeling of Composition and Channel Length-Dependent Transient Characteristics in Short-Channel IGZO Field-Effect Transistors

Kim, Donguk; Lee, Dayeon; Kim, Wonjung; Lee, Ho Jung; Kim, Changwook; Lee, Kwang-Hee; Jung, Moonil; Yang, Jee-Eun; Jang, Younjin; Kim, Sungjun, et al.

ArticleIssue Date2025CitationACS Applied Materials & Interfaces, v.17, no.4, pp 6513 - 6520PublisherACS Publications
SCIESCOPUS
Organic/Inorganic Hybrid Top-Gate Transistors with Ultrahigh Electron Mobility via Enhanced Electron Pathwaysopen access

Park, Ji-Min; Lee, Hyunkyu; Lee, GunOh; Jang, Seong Cheol; Chang, Yun Hee; Hong, Hyunmin; Chung, Kwun-Bum; Lee, Kyung Jin; Kim, Dae Hwan; Kim, Hyun-Suk

ArticleIssue Date2023CitationACS Applied Materials & Interfaces, v.15, no.1, pp 1525 - 1534PublisherAmerican Chemical Society
SCIESCOPUS
Quantized synaptic characteristics in HfO2-nanocrystal based resistive switching memoryopen access

Mahata, Chandreswar; Ismail, Muhammad; Kim, Dae Hwan; Kim, Sungjun

ArticleIssue Date2022CitationJournal of Materials Research and Technology, v.21, pp 981 - 991PublisherElsevier B.V.
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