ScholarWorks@Dongguk University: Chung, Kwun-Bum

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Chung, Kwun-Bum (정권범)

College of Natural Science (Department of Physics)

Research Area: 디스플레이 소재/소자, 지능형 반도체 소재/소자, 전자구조 및 결함분석

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oxide semiconductor:7||electronic structure:6||Electronic structure:5||thinfilm transistor:5||Stability:3||InGaZnO:3||Organic solar cells:3||Oxide semiconductor:3||oxygen vacancy:3||IGZO:3||tellurium:3||zincoxynitride:3||Atomic layer deposition:3||Transparent conducting oxide:3||high mobility:3||Atomic layer deposition (ALD):2||Al:IZTO:2||heterojunction:2||Crystallization:2||Al doped ZnO:2||Amorphous InGaZnO (aIGZO):2||thin film transistor:2||reliability:2||Sndoped In2O3:2||thinfilm transistor (TFT):2||thinfilm transistors:2||thinfilm transistors (TFTs):2||defect analysis:2||super yellow:2||Thermal stability:2||PEDOT:PSS:2||Triboelectric nanogenerators:2||Thin film transistor:2||Defect states:1||Density functional theory:1||Density functional theory (DFT):1||Densityfunctional theory (DFT) calculations:1||Dielectric constant:1||Dippen nanolithography:1||Dual anode buffer layer:1||Electron blocking layer:1||Electron trapping layer:1||Electronegativity:1||Extinction coefficient (k):1||FDTD:1||Farfield scattering:1||Fieldeffect mobility:1||Flexible organic solar cells:1||Glass transition temperature (Tg):1||Glucose sensor:1||Gold nanoparticles:1||Gold(III) chloride:1||Graphene Network:1||Graphene Oxide:1||Green phosphorescent OLEDs:1||HfO2:1||High mobility:1||Hydrogen control:1||Hydrogen irradiation:1||ITO:1||ITZO thin films transistor:1||Improved charge balance:1||InGaZnO (IGZO):1||InSnO:1||Insitu analysis:1||InGaO:1||InO:1||InTaO:1||InZnAlO:1||InZnO:1||Indium oxide thinfilm transistor (In2O3 TFT):1||Indium vanadium oxide:1||Indiumtinzincoxide (ITZO):1||Indoor photovoltaic:1||Interface barriers:1||Interlayer:1||Inverted polymer solar cells:1||Ion implantation:1||Li doping:1||LiNi0.5Mn1.5O4:1||LiPON:1||Light analysis:1||Lithium ion battery:1||Localized states:1||Logic gates:1||Low temperature process:1||Lowlight harvesting:1||MF sputtering method:1||Microcavity effect:1||Microstructure:1||Mnadsorption:1||Molybdenum disulfide:1||Molybdenum doped indium oxide:1||Molybdenum oxide (MoO3):1||NIST:1||Nano sized Ag layer:1||Nanoporous surface:1||Nearfield plasmon resonance:1||Nitrogen:1||Optical modelling:1||Optical property:1||Organic lightemitting diodes:1||Oxide thin film transistor:1||Oxygen partial pressure:1||Oxygen vacancies:1||Ozone:1||P3HT:ICBA:1||Performance evaluation:1||Perovskite solar cells:1||Photocatalyst:1||Physical properties:1||Plasma enhanced chemical vapor deposition (PECVD):1||Polarization:1||Postnitridation annealing:1||Power conversion efficiency:1||Preferred orientation:1||Quantitative analysis of defect state:1||RF sputtering:1||Refractive index (n):1||Reliability:1||Resonant frequency:1||Rolltoroll sputtering:1||Rutile phase:1||Schottky barrier diode:1||SiC:1||SiOx Passivation layer:1||Siliconbased solar cells:1||Silicondoped InSnO:1||SnSeO:1||Solarblind photodetector:1||Solution immersion treatment:1||Solution process:1||Sputtered ZnO:1||Sputtering:1||Stainless steel:1||Stress:1||Supercycle:1||Surface charge density:1||Surface morphological degradation:1||Surface passivation:1||Swelling:1||Swift heavyion irradiation:1||Tellurium:1||Thickness:1||Thin film:1||Thin film transistors:1||Thin film transistors (TFT):1||Thinfilm transistor:1||Thinfilm transistors:1||Threshold voltage:1||TiO2x nanoparticle:1||TiOx nanoparticles:1||Time resolved photoluminescence:1||Titanium oxide:1||Top emission organic lightemitting diodes (TEOLEDs):1||Transparent conducting electrodes:1||Transparent conductive oxide:1||Transparent electrode:1||Transparent electrodes:1||Triboelectric resonator:1||Triboelectrification:1||Tungsten oxide (WO3):1||UVO treatment energy:1||Vertical phase segregation:1||Wire:1||Xray photoelectron spectroscopy:1||Xe ions:1||Zinc oxide:1||ZnBaSnO:1||ZnO:1||ZnO nanocomposite:1||ZnO nanoparticles:1||ZnSnO thin film transistor:1||amorphous indium gallium zinc tin oxide (aIGZTO):1||amorphous oxide semiconductor:1||atomic layer deposition:1||atomic layer deposition (ALD):1||band alignment:1||band gap:1||bandgap engineering:1||betaGa2O3:1||bias potential:1||bismuth halide:1||caxis aligned crystalline (CAAC):1||carbon nanotube:1||cation interstitial:1||chemical vapor deposition:1||copper(II) poly(styrene sulfonate):1||dorbital ordering:1||deep level defects:1||depth profiling:1||device instability:1||dielectric dispersion:1||double gate (DG) thinfilm transistor (TFT):1||elastic recoil detection (ERD):1||electrical performance:1||electron trapping:1||energy harvesters:1||environmental stability:1||facingtarget sputtering:1||flexibledevice:1||gC3N4:1||gate insulator (GI):1||high dielectric constant:1||high performance:1||holeinjection layer:1||hybrid lightemitting transistors:1||hydrogen:1||hydrogen behavior:1||iline:1||indium gallium zinc oxide:1||indium gallium zinc oxide (IGZO):1||indium gallium zinc oxide (IGZO) thinfilm transistors (TFTs):1||indium oxide:1||indium zinc oxide:1||indiumgalliumzincoxide (IGZO) thinfilm transistors (TFTs):1||instability:1||interfaceanalysis:1||inverted polymer solar cell:1||ion bombardment:1||ion irradiation:1||ion pileup:1||large area film:1||lead free:1||light emitting transistors:1||lightemitting transistors:1||liquidtriboelectric nanogenerators:1||lithium evaporation:1||lithium ion battery (LIB):1||lithium poly(styrene sulfonate):1||localized strain:1||low cost:1||low temperature:1||low temperature process:1||low threshold voltage:1||mass density:1||metal capping layer:1||metal oxide semiconductor:1||metalcapping layer:1||metaloxide semiconductor:1||metaloxide thin film transistors:1||metaloxide thin films:1||metaloxide thinfilm transistors:1||methodology & inspection:1||migration:1||molecular beam epitaxy:1||molybenum diselenides:1||neutron irradiation:1||nitrogen doping:1||optical band gap:1||organicinorganic halide perovskite:1||orthogonal polymer semiconductor gel:1||oxide thin film transistor:1||oxide thinfilm transistors (TFTs):1||oxygen defects:1||ptype SnOx:1||ptype inorganic semiconductor:1||ptype semiconductor:1||paraxylylene:1||perovskite:1||perovskite solar cell:1||photographinduced current transient spectroscopy (PICTS):1||photoinduced current transient spectroscopy:1||photolithography:1||phototransistor:1||plasma polymer fluorocarbon (PPFC):1||plasma treatment:1||polyimide:1||positive bias temperaturestress (PBTS):1||print:1||quantitative analysis of defect:1||quantitative measurement:1||quantum dot:1||resistivity:1||rotational layer:1||scalable:1||second harmonic generation:1||semiinterpenetrating diphasic polymer network:1||semiconducting properties:1||sequential solution processes:1||shallowlevel defects:1||shallowleveldefects:1||AIO/Ag/AIO multilayer:1||simultaneous ultraviolet and thermal treatment (SUT):1||solar cells:1||solid electrolyte:1||solution process:1||solutionprocess:1||sputtering:1||stability:1||stepper:1||stretchable and deformable electronics:1||submicrometer tandem electronics:1||swift heavy Ni ion:1||swift heavy ion:1||tactile sensors:1||thermal stability:1||thin film transistor (TFT):1||thinfilm batteries:1||thinfilm transistors (TFTs) tungstendoped indiumzinc oxide (WIZO):1||thinfilmtransistor (TFT):1||threshold voltage:1||topgate transistors:1||transistor:1||transition metal dichalcogenids:1||transparent conducting oxide:1||transparent metal oxide:1||triboelectric nanogenerator (TENG):1||triboelectric nanogenerators:1||tungstendoped InZnO:1||tungstendoped indium zinc oxide:1||ultraviolet irradiation:1||valence band engineering:1||vanadium oxidebased cathodes:1||water vapor annealing:1||work function:1||xray spectroscopy:1||zinc oxynitride:1||shortchannel:1||Active layer thickness:1||Ag agglomeration:1||Agdoped In2O3:1||Al doping concentration:1||Aldoped ZnO:1||Alumina:1||Aluminum hydroxide:1||Aluminum oxide:1||Aluminum oxide (Al2O3):1||Amorphous:1||Amorphous indium gallium zinc oxide (aIGZO):1||Anatase phase:1||Annealing:1||Anode:1||Antireflection coating:1||Antireflective effect:1||Au ion irradiation:1||Band well structure:1||Biosensor:1||Buffer layer:1||Bulk heterojunction:1||Charge balance:1||Chemical bonding state:1||Chemical bonding states:1||Computational modeling:1||Conducting mechanism:1||Conduction band offset:1||Contact angle:1||Contact area:1||Crack:1||Cylindrical rotating magnetron sputtering:1||Deeplevel defects:1||

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