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Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Contentopen access
- Authors
- Kim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan
- Issue Date
- Oct-2022
- Publisher
- MDPI
- Keywords
- neuromorphic system; synaptic device; compact modeling; indium gallium zinc oxide
- Citation
- Micromachines, v.13, no.10, pp 1 - 13
- Pages
- 13
- Indexed
- SCIE
SCOPUS
- Journal Title
- Micromachines
- Volume
- 13
- Number
- 10
- Start Page
- 1
- End Page
- 13
- ISSN
- 2072-666X
2072-666X
- Abstract
- This paper introduces a compact SPICE model of a two-terminal memory with a Pd/Ti/IGZO/p(+)-Si structure. In this paper, short- and long-term components are systematically separated and applied in each model. Such separations are conducted by the applied bias and oxygen flow rate (OFR) during indium gallium zinc oxide (IGZO) deposition. The short- and long-term components in the potentiation and depression curves are modeled by considering the process (OFR of IGZO) and bias conditions. The compact SPICE model with the physical mechanism of SiO2 modulation is introduced, which can be useful for optimizing the specification of memristor devices.
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)