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Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WOx/TaN Memristorsopen access

Cho, Youngboo; Kim, Jihyung; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationMaterials, v.16, no.4, pp 1 - 9PublisherMDPI
SCIESCOPUS
Coexistence of non-volatile and volatile characteristics of the Pt/TaOx/TiN deviceopen access

Yun, Seokyeon; Park, Jongmin; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationResults in Physics, v.34, pp 1 - 6PublisherElsevier BV
SCIESCOPUS
Comparison of synaptic properties considering dopant concentration and device operation polarity in Cu/SiN/SiO2/p-Si devices for neuromorphic system

Kwon, Osung; Kim, Yoon; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2021CitationAPPLIED SURFACE SCIENCE, v.563PublisherELSEVIER
SCIESCOPUS
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic systemopen access

Kim, Chaeun; Lee, Yunseok; Kim, Sunghun; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationMaterials Science in Semiconductor Processing, v.157, pp 1 - 6PublisherElsevier Ltd
SCIESCOPUS
Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

Ismail, Muhammad; Kim, Sunghun; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2024CitationJournal of Alloys and Compounds, v.1003, pp 1 - 13PublisherElsevier BV
SCIESCOPUS
Exploring conductance modulation and implementation of convolutional neural network in Pt/ZnO/Al2O3/TaN memristors for brain-inspired computingopen access

Ismail, Muhammad; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationCeramics International, v.49, no.11, pp 19032 - 19042PublisherElsevier Ltd
SCIESCOPUS
Forming-Free Tunable Analog Switching in WOx/TaOx Heterojunction for Emulating Electronic Synapsesopen access

Mahata, Chandreswar; Pyo, Juyeong; Jeon, Beomki; Ismail, Muhammad; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationMaterials, v.15, no.24, pp 1 - 12PublisherMDPI
SCIESCOPUS
Gradual conductance modulation of Ti/WOx/Pt memristor with self-rectification for a neuromorphic system

Shin, Jiwoong; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2021CitationAPPLIED PHYSICS LETTERS, v.119, no.1PublisherAIP Publishing
SCIESCOPUS
Improved Resistive and Synaptic Characteristics in Neuromorphic Systems Achieved Using the Double-Forming Processopen access

Kim, Minkang; Ju, Dongyeol; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationNanomaterials, v.13, no.21, pp 1 - 12PublisherMDPI
SCIESCOPUSKCI
Mimicking biological synapses with a-HfSiOx-based memristor: implications for artificial intelligence and memory applicationsopen access

Ismail, Muhammad; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationNano Convergence, v.10, no.1, pp 1 - 15Publisher나노기술연구협의회
SCIESCOPUS
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrodeopen access

Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.10, pp 1 - 12PublisherMDPI
SCIESCOPUS
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulationopen access

Ismail, Muhammad; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationJournal of Alloys and Compounds, v.960, pp 1 - 9PublisherElsevier B.V.
SCIESCOPUS
Pulse frequency dependent synaptic characteristics in Ta/SiN/Si memristor device for neuromorphic system

Park, Minsu; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2021CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.882PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineeringopen access

Ismail, Muhammad; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationNanoscale Research Letters, v.17, no.1, pp 1 - 14PublisherSpringer Science+Business Media
SCOPUS
SEMICONDUCTOR MEMORIES FOR LOW-POWER AND LOW-COMPUTE HARDWARE-ORIENTED ARTIFICIAL INTELLIGENCE SYSTEMopen access

Kim, Soomin; Lee, Yeji; Son, So Won; Kim, Sungjun; Kim, Soo Youn; Kang, Myounggon; Cho, Seongjae

ArticleIssue Date2025CitationProceedings of the 2025 International Conference on Machine Learning and Cybernetics, pp 402 - 406PublisherIEEE
SCIESCOPUS
Short-term and long-term synaptic plasticity in Ag/HfO2/SiO2/Si stack by controlling conducting filament strength

Lee, Yewon; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2021CitationAPPLIED SURFACE SCIENCE, v.565PublisherELSEVIER
SCIESCOPUS
SnO2-Based Memory Device with Filamentary Switching Mechanism for Advanced Data Storage and Computingopen access

Ismail, Muhammad; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationNanomaterials, v.13, no.18, pp 1 - 13PublisherMDPI
SCIESCOPUS
Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic Systemopen access

Mahata, Chandreswar; Ismail, Muhammad; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationNanoscale Research Letters, v.17, no.1, pp 1 - 9PublisherSpringer Science+Business Media
SCIESCOPUS
Synaptic plasticity features and neuromorphic system simulation in AlN-based memristor devicesopen access

Kwon, Osung; Lee, Yewon; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2022CitationJournal of Alloys and Compounds, v.911, pp 1 - 7PublisherElsevier BV
SCIESCOPUS
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computingopen access

Ismail, Muhammad; Rasheed, Maria; Kim, Sunghun; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationACS Materials Letters, v.5, no.11, pp 3080 - 3092PublisherAmerican Chemical Society
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