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ACS Applied Electronic Materials

Journal Title

  • ACS Applied Electronic Materials

ISSN

  • E 2637-6113

Publisher

  • AMER CHEMICAL SOC

Listed on(Coverage)

JCR 2020-2023
SJR 2020;2022-2023
CiteScore 2020-2023
SCIE 2020-2024
CC 2020-2024
SCOPUS 2020-2024

Active

  • Active

    based on the information

    • SCOPUS:2024-10

Country

  • USA

Aime & Scopes

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Article List

1 - 16 out of 16 results.

SCIESCOPUS
Crystallization-Induced Interface Control in Poly-Si Flash for High-Accuracy Neuromorphic Inferenceopen access

Ryu, Donghyun; Park, Suyong; Kim, Gimun; Lee, Hyeon Ho; Kim, Sungjoon; Kim, Sungjun; Choi, Woo Young

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.21, pp 9830 - 9837PublisherAmerican Chemical Society
SCIESCOPUS
Array-Integrated Memristor with an Interference-Suppressed Pulse Scheme for Multibit Neuromorphic and Edge Computingopen access

Noh, Minseo; Byun, Yongjin; Kim, Gimun; Park, Junhyeok; Kim, Sungjoon; Kim, Sungjun

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.17, pp 8211 - 8226PublisherAmerican Chemical Society
SCIESCOPUS
Dual-Mode Functionality in Analog-Weight-Tunable TiOx -Based RRAM: Exploiting Optical and Electrical Stimuli for Synaptic Behaviorsopen access

Park, Hyogeun; So, Hyojin; Ko, Minsu; Kim, Sungjun; Kim, Sungjoon

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.15, pp 7432 - 7445PublisherAmerican Chemical Society
SCIESCOPUS
Investigation of Chlorine-Induced Damage in Oxide Semiconductor Transistorsopen access

Na, Jae Won; Lee, Seungbin; Min, Hyeonhong; Jang, Gwanghyeon; Song, Minseop; Lee, I. Sak; Yang, Jong-Heon; Kim, Min Jung; Chung, Kwun-Bum; Kim, Si Joon

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.13, pp 6128 - 6136PublisherAmerican Chemical Society
SCIESCOPUS
Cognitive Learning and Neuromorphic Systems Using Resistive Switching Random-Access Memory

Noh, Minseo; Park, Hyogeun; Kim, Sungjun

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.6, pp 2156 - 2172PublisherAmerican Chemical Society
SCIESCOPUS
Evolution of Defect States within the Band Gap of Indium-Tin-Zinc Oxide Thin Film Transistors Using the Quantitative Defect Analysis Method

Shin, Dong Yeob; Kim, Min Jung; Go, Jinyoung; Hong, Hyunmin; Lee, Sunwoo; Park, Younggil; Weldemhret, Teklebrahan Gebrekrstos; Jeong, Kwangsik; Chung, Kwun-Bum

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.7, pp 2928 - 2938PublisherAmerican Chemical Society
SCIESCOPUS
Strategy for the Integrated Design of Ferroelectric and Resistive Memristors for Neuromorphic Computing Applications

Lee, Jung-Kyu; Park, Yongjin; Seo, Euncho; Park, Woohyun; Youn, Chaewon; Lee, Sejoon; Kim, Sungjun

ArticleIssue Date2025CitationACS APPLIED ELECTRONIC MATERIALS, v.7, no.7, pp 3055 - 3066PublisherAmerican Chemical Society
SCIESCOPUS
Enhanced Photovoltaic Performance and X-ray Sensing Capabilities of MoSe2 Nanosheet-Based Bulk Heterojunction Polymer Solar Cells: A Comparative Study of Power Conversion Efficiency and Sensitivity

Aftab, Sikandar; Liu, Hailiang; Mukhtar, Maria; Vikraman, Dhanasekaran; Hussain, Sajjad; Kang, Jungwon; Al-Kahtani, Abdullah A.; Mustafa, Ghulam M.; Goud, Burragoni Sravanthi; Kim, Jae Hong

ArticleIssue Date2025CitationACS Applied Electronic Materials, v.7, no.1, pp 590 - 600PublisherAmerican Chemical Society
SCIESCOPUS
Understanding Coulomb Scattering Mechanism in Ambipolar Tellurium Nanosheet Transistors

Cheong, Min; Choi, Dahyun; You, Bolim; Kim, Yuna; Han, Yeongseo; Kim, Taesoo; Ko, Changhyun; MacManus-Driscoll, Judith L.; Flewitt, Andrew J.; Kim, Un Jeong, et al.

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.11, pp 8532 - 8539PublisherAmerican Chemical Society
SCIESCOPUS
Quantitative Dynamic Evolution of Unoccupied States in Hydrogen Diffused InGaZnSnO TFT under Positive Bias Temperature Stress

Hong, Hyunmin; Kim, Min Jung; Yi, Dong-Joon; Shin, Dong Yeob; Moon, Yeon-Keon; Son, Kyoung-Seok; Lim, Jun Hyung; Jeong, Kwang Sik; Chung, Kwun-Bum

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.10, pp 7584 - 7590PublisherAmerican Chemical Society
SCIESCOPUS
High-Performance 1D−2D Te/MoS2 Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

Park, Jihyang; Kim, Yuna; You, Bolim; Huh, Jihoon; Kim, Goohwan; Son, Hyungbin; Park, Yeonsang; Hahm, Myung Gwan; Kim, Un Jeong; Lee, Moonsang

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.8, pp 6147 - 6154PublisherAmerican Chemical Society
SCIESCOPUS
Inorganic p-Type Tellurium-Based Synaptic Transistors: Complementary Synaptic Pairs with n-Type Devices for Energy-Efficient Operation

Lee, Seung Min; Park, Ji-Min; Ahn, Suhyeon; Jang, Seong Cheol; Kim, Hyungjin; Kim, Hyun-Suk

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.7, pp 5371 - 5378PublisherAmerican Chemical Society
SCIESCOPUS
Control of Interfacial Defect States in the Flexible InGaZnO Thin Film Transistor with a 6FDA-MDA Gate Insulator by Using an Al2O3 Interlayer

Kim, Min Jung; Park, Hyunjin; Hong, Hyunmin; Yoo, Sungmi; Jeong, Kwangsik; Kim, Yun Ho; Chung, Kwun-Bum

ArticleIssue Date2024CitationACS Applied Electronic Materials, v.6, no.2, pp 1151 - 1160PublisherAmerican Chemical Society
SCIESCOPUS
Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEMopen access

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Park, Byung-Gook; Choi, Woo Young

ArticleIssue Date2023CitationACS Applied Electronic Materials, v.5, no.3, pp 1834 - 1843PublisherAmerican Chemical Society
SCIESCOPUS
Ultralow Subthreshold Swing 2D/2D Heterostructure Tunneling Field-Effect Transistor with Ion-Gel Gate Dielectricsopen access

Oh, Guen Hyung; An, Jin Gi; Kim, Sang-il; Shin, Jae Cheol; Park, Jonghoo; Kim, Tae Wan

ArticleIssue Date2023CitationACS Applied Electronic Materials, v.5, no.1, pp 196 - 204PublisherAmerican Chemical Society
SCIESCOPUS
Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligenceopen access

Ismail, Muhammad; Mahata, Chandreswar; Kwon, Osung; Kim, Sungjun

ArticleIssue Date2022CitationACS Applied Electronic Materials, v.4, no.3, pp 1288 - 1300PublisherAmerican Chemical Society
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