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Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles
- Authors
- Algadi, Hassan; Mahata, Chandreswar; Alsuwian, Turki; Ismail, Muhammad; Kwon, Daewoong; Kim, Sungjun
- Issue Date
- 1-Sep-2021
- Publisher
- ELSEVIER
- Keywords
- Transparent RRAM; ALD Pt-nanoparticles; Multilevel conductance properties; STDP
- Citation
- MATERIALS LETTERS, v.298
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS LETTERS
- Volume
- 298
- ISSN
- 0167-577X
1873-4979
- Abstract
- ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices. (c) 2021 Elsevier B.V. All rights reserved.
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)