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Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Algadi, Hassan | - |
| dc.contributor.author | Mahata, Chandreswar | - |
| dc.contributor.author | Alsuwian, Turki | - |
| dc.contributor.author | Ismail, Muhammad | - |
| dc.contributor.author | Kwon, Daewoong | - |
| dc.contributor.author | Kim, Sungjun | - |
| dc.date.accessioned | 2024-08-08T09:01:46Z | - |
| dc.date.available | 2024-08-08T09:01:46Z | - |
| dc.date.issued | 2021-09-01 | - |
| dc.identifier.issn | 0167-577X | - |
| dc.identifier.issn | 1873-4979 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/20881 | - |
| dc.description.abstract | ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices. (c) 2021 Elsevier B.V. All rights reserved. | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER | - |
| dc.title | Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.matlet.2021.130011 | - |
| dc.identifier.scopusid | 2-s2.0-85105736044 | - |
| dc.identifier.wosid | 000663718000022 | - |
| dc.identifier.bibliographicCitation | MATERIALS LETTERS, v.298 | - |
| dc.citation.title | MATERIALS LETTERS | - |
| dc.citation.volume | 298 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordAuthor | Transparent RRAM | - |
| dc.subject.keywordAuthor | ALD Pt-nanoparticles | - |
| dc.subject.keywordAuthor | Multilevel conductance properties | - |
| dc.subject.keywordAuthor | STDP | - |
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Related Researcher
- Ismail, Muhammad
- College of Engineering (Department of Electronics and Electrical Engineering)