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SCIESCOPUS
ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr(1-x)M(x)O(3) (A = Ba, Ca, Sr; M = Al, Cu, x=0.25) for application of memory devices

Khera, Ejaz Ahmad; Ullah, Hafeez; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Resheed, Umbreen; Rana, Anwar Manzoor; Hussain, Muhammad Iqbal; Mahata, Chandreswar, et al.

ArticleIssue Date2021CitationJOURNAL OF MOLECULAR GRAPHICS & MODELLING, v.103PublisherELSEVIER SCIENCE INC
SCIESCOPUS
Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Ismail, Muhammad; Kim, Yoon; Kim, Sungjun

ArticleIssue Date2021CitationAPPLIED SURFACE SCIENCE, v.544PublisherELSEVIER
SCIESCOPUS
Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Deviceopen access

Khan, Sobia Ali; Lee, Geun Ho; Mahata, Chandreswar; Ismail, Muhammad; Kim, Hyungjin; Kim, Sungjun

ArticleIssue Date2021CitationNANOMATERIALS, v.11, no.2, pp 1 - 9PublisherMDPI
SCIESCOPUS
Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures

Cho, Hyojong; Ryu, Ji-Ho; Mahata, Chandreswar; Ismail, Muhammad; Chen, Ying-Chen; Chang, Yao-Feng; Cho, Seongjae; Mikhaylov, Alexey; Lee, Jack C.; Kim, Sungjun

ArticleIssue Date2020CitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.43PublisherIOP PUBLISHING LTD
SCIESCOPUS
Charge trapping characteristics of sputter-AlOx/ALD Al2O3/Epitaxial-GaAs-based non-volatile memory

Mahata, Chandreswar; Ghosh, Siddhartha; Chakraborty, Sandipan; Patro, Laxmi Narayana; Tripathi, Anjana; Thapa, Ranjit; Ramakrishna, Seeram; Kim, Sungjun; Dalapati, Goutam Kumar

ArticleIssue Date2021CitationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.32, no.4, pp 4157 - 4165PublisherSPRINGER
SCIESCOPUS
Effect of interlayer on resistive switching properties of SnO2-based memristor for synaptic applicationopen access

Rahmani, Mehr Khalid; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun

ArticleIssue Date2020CitationRESULTS IN PHYSICS, v.18PublisherELSEVIER
SCIESCOPUS
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

Ryu, Ji-Ho; Hussain, Fayyaz; Mahata, Chandreswar; Ismail, Muhammad; Abbas, Yawar; Kim, Min-Hwi; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationAPPLIED SURFACE SCIENCE, v.529PublisherELSEVIER
SCIESCOPUS
Improvement of Photoresponse Properties of Self-Powered ITO/InP Schottky Junction Photodetector by Interfacial ZnO Passivation

Algadi, Hassan; Mahata, Chandreswar; Kim, Sungjun; Dalapati, Goutam Kumar

ArticleIssue Date2021CitationJOURNAL OF ELECTRONIC MATERIALS, v.50, no.4, pp 1800 - 1806PublisherSPRINGER
SCIESCOPUS
Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application

Ryu, Ji-Ho; Mahata, Chandreswar; Kim, Sungjun

ArticleIssue Date2021CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.850PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrateopen access

Rahmani, Mehr Khalid; Kim, Min-Hwi; Hussain, Fayyaz; Abbas, Yawar; Ismail, Muhammad; Hong, Kyungho; Mahata, Chandreswar; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.5PublisherMDPI
SCIESCOPUS
Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode

Mahata, Chandreswar; Kim, Sungjun

ArticleIssue Date2021CitationCERAMICS INTERNATIONAL, v.47, no.1, pp 1199 - 1207PublisherELSEVIER SCI LTD
SCIESCOPUS
Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrodeopen access

Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.10, pp 1 - 12PublisherMDPI
SCIESCOPUS
Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems

Mahata, Chandreswar; Lee, Changmin; An, Youngseo; Kim, Min-Hwi; Bang, Suhyun; Kim, Chae Soo; Ryu, Ji-Ho; Kim, Sungjun; Kim, Hyoungsub; Park, Byung-Gook

ArticleIssue Date2020CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.826PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Lee, Jinju; Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Sim, Eunjin; Ismail, Muhammad; Abbas, Yawar; Abbas, Haider; Lee, Dong Keun, et al.

ArticleIssue Date2020CitationACS APPLIED MATERIALS & INTERFACES, v.12, no.30, pp 33908 - 33916PublisherAMER CHEMICAL SOC
SCIESCOPUS
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineeringopen access

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Ismail, Muhammad; Mahata, Chandreswar; Oh, Teresa; Imran, Muhammad; Min, Kyung Kyu; Kim, Tae-Hyeon; Yang, Byung-Do, et al.

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 130678 - 130686PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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