Detailed Information
Cited 17 time in 
Cited 16 time in 
Cited 16 time in
Metadata Downloads
Improvement of Photoresponse Properties of Self-Powered ITO/InP Schottky Junction Photodetector by Interfacial ZnO Passivation
- Issue Date
- Apr-2021
- Publisher
- SPRINGER
- Keywords
- ALD ZnO; InP; interfacial passivation; Schottky junction; photodetectors
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.50, no.4, pp 1800 - 1806
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 50
- Number
- 4
- Start Page
- 1800
- End Page
- 1806
- ISSN
- 0361-5235
1543-186X
- Abstract
- A self-powered ITO/ZnO/InP heterojunction photodetector has been demonstrated with a 10-nm ZnO interfacial layer deposited by atomic layer deposition as a hole-blocking layer. The presence of a valence band offset between InP and ZnO enhances the photocurrent. The valence band offset between InP and ZnO creates a sufficient barrier for hole movement. Low surface recombination under 520-nm laser irradiation produced maximum photoresponsivity of 44.2 mAW(-1) with an illumination power of 1 mu W at zero bias. The ZnO-passivated self-powered photodetector shows fast response and improved photo-detecting properties. Furthermore, the highly sensitive photodetectors are demonstrated to record the heart pulse wave by measuring relative changes in blood volume of the finger vessels.
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)