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Showing results 1 to 14 of 14

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Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic Systemopen access

Ju, Dongyeol; Kim, Sunghun; Kim, Sungjun

ArticleIssue Date2023CitationNanomaterials, v.13, no.17, pp 1 - 13PublisherMDPI
SCIESCOPUS
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun, et al.

ArticleIssue Date2023CitationNanoscale, v.15, no.34, pp 14267 - 14267PublisherRoyal Society of Chemistry
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Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic Systemopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Kim, Sungjoon; Kim, Tae-Hyeon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2023CitationAdvanced Materials Interfaces, v.10, no.21PublisherWiley-VCH GmbH
SCIESCOPUS
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic systemopen access

Kim, Chaeun; Lee, Yunseok; Kim, Sunghun; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationMaterials Science in Semiconductor Processing, v.157, pp 1 - 6PublisherElsevier Ltd
SCIESCOPUS
Double-Forming Mechanism of TaOx-Based Resistive Memory Device and Its Synaptic Applicationsopen access

Ju, Dongyeol; Kim, Sunghun; Lee, Subaek; Kim, Sungjun

ArticleIssue Date2023CitationMaterials, v.16, no.18, pp 1 - 13PublisherMDPI
SCIESCOPUS
Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic systemopen access

Park, Yongjin; Kim, Jihyung; Kim, Sunghun; Kim, Dahye; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2023CitationJournal of Materials Chemistry C, v.11, no.40, pp 13886 - 13896PublisherRoyal Society of Chemistry
SCIESCOPUS
Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing

Ismail, Muhammad; Kim, Sunghun; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2024CitationJournal of Alloys and Compounds, v.1003, pp 1 - 13PublisherElsevier BV
SCIESCOPUS
Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic Systemopen access

Ju, Dongyeol; Kim, Sunghun; Jang, Junwon; Kim, Sungjun

ArticleIssue Date2023CitationMaterials, v.16, no.18, pp 1 - 11PublisherMDPI
SCIESCOPUS
Logic-in-memory application of CMOS compatible silicon nitride memristor

Kim, Dahye; Kim, Sunghun; Kim, Sungjun

ArticleIssue Date2021CitationCHAOS SOLITONS & FRACTALS, v.153PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCIESCOPUS
Neuromorphic synaptic applications of HfAlOx-based ferroelectric tunnel junction annealed at high temperatures to achieve high polarizationopen access

Kim, Sunghun; Kim, Juri; Kim, Dahye; Kim, Jihyung; Kim, Sungjun

ArticleIssue Date2023CitationAPL Materials, v.11, no.10, pp 1 - 10PublisherAIP Publishing
SCIESCOPUS
Programmable Retention Characteristics in MoS2‑Based Atomristors for Neuromorphic and Reservoir Computing Systems

Lee, Yoonseok; Huang, Yifu; Chang, Yao-Feng; Yang, Sung Jin; Ignacio, Nicholas D.; Kutagulla, Shanmukh; Mohan, Sivasakthya; Kim, Sunghun; Lee, Jungwoo; Akinwande, Deji, et al.

ArticleIssue Date2024CitationACS Nano, v.18, no.22, pp 14327 - 14338PublisherAmerican Chemical Society
SCIESCOPUS
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun, et al.

ArticleIssue Date2023CitationNanoscale, v.15, no.32, pp 13239 - 13251PublisherRoyal Society of Chemistry
SCIESCOPUS
Transition of short-term to long-term memory of Cu/TaOx/CNT conductive bridge random access memory for neuromorphic engineeringopen access

Kim, Jihyung; Choi, Jin Hyeong; Kim, Sunghun; Choi, Changsoon; Kim, Sungjun

ArticleIssue Date2023CitationCarbon, v.215, pp 1 - 10PublisherElsevier Ltd
SCIESCOPUS
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computingopen access

Ismail, Muhammad; Rasheed, Maria; Kim, Sunghun; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun

ArticleIssue Date2023CitationACS Materials Letters, v.5, no.11, pp 3080 - 3092PublisherAmerican Chemical Society
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