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SCIESCOPUS
Cost-Effective and Fully Hardware-Oriented Reservoir Computing Based on IGZO/HZO Ferroelectric Thin-Film Transistor with Electrically and Optically Distinguishable States

Kim, Doohyung; Lee, Seungjun; Lee, Yoonseok; Park, Yongjin; Lee, Jungwoo; Kim, Sungjun

ArticleIssue Date2024CitationAdvanced Functional Materials, v.34, no.49PublisherWiley-VCH GmbH
SCIESCOPUS
Energy Efficient Hybrid Reservoir Computing Using Hfn.5Zrn.5O2 Ferroelectric Thin-Film Transistors with an Integrated Optically and Electrically Synaptic Functionsopen access

Lee, Seungjun; An, Gwangmin; Kim, Doohyung; Lee, Hyeonho; Kim, Sungjun; Kim, Tae-Hyeon

ArticleIssue Date2025CitationSmall, v.21, no.32PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Dopingopen access

Kim, Doohyung; Kim, Jihyung; Kim, Sungjun

ArticleIssue Date2022CitationNanomaterials, v.12, no.19, pp 1 - 9PublisherMDPI
SCIESCOPUS
Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiOxNy/SnOx Memristor for Neuromorphic Systems

Ismail, Muhammad; Kim, Doohyung; Lim, Eunjin; Rasheed, Maria; Mahata, Chandreswar; Seo, Yeongkyo; Kim, Sungjun

ArticleIssue Date2024CitationACS Materials Letters, v.6, no.8, pp 3514 - 3522PublisherAmerican Chemical Society
SCIESCOPUS
Optically and electrically modulated artificial synapses based on MoS2/PZT ferroelectric field-effect transistor for neuromorphic computing system

Chung, Woochan; Kim, Doohyung; Kim, Juri; Park, Jongmin; Kim, Sungjun; Lee, Sejoon

ArticleIssue Date2025CitationJournal of Materials Science & Technology, v.218, pp 25 - 34PublisherElsevier Ltd
SCIESCOPUS
Prospects and applications of volatile memristorsopen access

Kim, Dahye; Jeon, Beomki; Lee, Yunseok; Kim, Doohyung; Cho, Youngboo; Kim, Sungjun

ArticleIssue Date2022CitationApplied Physics Letters, v.121, no.1, pp 1 - 10PublisherAIP Publishing
SCIESCOPUS
Synaptic plasticity and associative learning in IGZO-based synaptic transistor

Jang, Junwon; Park, Suyong; Kim, Doohyung; Kim, Sungjun

ArticleIssue Date2024CitationSensors and Actuators A: Physical, v.376, pp 1 - 11PublisherElsevier BV
SCIESCOPUS
Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing

Lee, Seungjun; Kim, Doohyung; Kim, Sungjun

ArticleIssue Date2024CitationCeramics International, v.50, no.19, pp 36495 - 36502PublisherElsevier Ltd
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