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SCIESCOPUS
A Fully Si-Compatible Ni/Si3N4/Al2O3/p+ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applicationsopen access

Lee, Yeji; Kim, Soomin; Kim, Seongmin; Shim, Wonbo; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2025CitationACS Omega, v.10, no.47, pp 57476 - 57486PublisherAmerican Chemical Society
SCIESCOPUS
Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacanciesopen access

Mahata, Chandreswar; So, Hyojin; Kim, Soomin; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2023CitationMaterials, v.16, no.24, pp 1 - 12PublisherMDPI
SCIESCOPUS
Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2021CitationPHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.23, no.48, pp 27234 - 27243PublisherROYAL SOC CHEMISTRY
SCIESCOPUS
Bipolar resistive switching with unidirectional selector function in nitride/oxide heterostructures

Cho, Hyojong; Ryu, Ji-Ho; Mahata, Chandreswar; Ismail, Muhammad; Chen, Ying-Chen; Chang, Yao-Feng; Cho, Seongjae; Mikhaylov, Alexey; Lee, Jack C.; Kim, Sungjun

ArticleIssue Date2020CitationJOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.43PublisherIOP PUBLISHING LTD
SCIESCOPUS
CMOS compatible SiN-based memristive synapses for edge computing applicationsopen access

Park, Hyogeun; Noh, Minseo; Cho, Seongjae; Kim, Sungjun

ArticleIssue Date2025CitationJournal of Alloys and Compounds, v.1034, pp 1 - 11PublisherELSEVIER
SCIESCOPUS
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun, et al.

ArticleIssue Date2023CitationNanoscale, v.15, no.34, pp 14267 - 14267PublisherRoyal Society of Chemistry
SCIESCOPUS
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic Systemopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Kim, Sungjoon; Kim, Tae-Hyeon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2023CitationAdvanced Materials Interfaces, v.10, no.21PublisherWiley-VCH GmbH
SCIESCOPUS
Fabrication and Characterization of TiOx Memristor for Synaptic Device Application

Kim, Tae-Hyeon; Kim, Min-Hwi; Bang, Suhyun; Lee, Dong Keun; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.19, pp 475 - 480PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Hong, Kyungho; Kim, Sungjun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp 438 - 442PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Improvement of volatile switching in scaled silicon nanofin memristor for high performance and efficient reservoir computing

Ju, Dongyeol; Lee, Jungwoo; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2024CitationThe Journal of Chemical Physics, v.161, no.1, pp 1 - 10PublisherAIP Publishing
SCIESCOPUS
InGaZnO-based synaptic transistor with embedded ZnO charge-trapping layer for reservoir computing

Jang, Junwon; Lee, Jungwoo; Bae, Jong-Ho; Cho, Seongjae; Kim, Sungjun

ArticleIssue Date2024CitationSensors and Actuators A: Physical, v.373, pp 1 - 9PublisherElsevier BV
SCIESCOPUS
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulationopen access

Choi, Yeon-Joon; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Hong, Kyungho; Kim, Chae Soo; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 228720 - 228730PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM

Hong, Kyungho; Min, Kyung Kyu; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Choi, Yeon Joon; Kim, Chae Soo; Lee, Jae Yoon; Kim, Sungjun, et al.

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.4, pp 1600 - 1605PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Leaky 2T Dynamic Random-Access Memory Devices Based on Nanometer-Thick Indium-Gallium-Zinc-Oxide Films for Reservoir Computing

Jang, Junwon; Kim, Seongmin; Park, Suyong; Kim, Soomin; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2024CitationACS Applied Nano Materials, v.7, no.19, pp 22430 - 22435PublisherAmerican Chemical Society
SCIESCOPUS
Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Applicationopen access

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationELECTRONICS, v.9, no.8, pp 1 - 8PublisherMDPI
SCIESCOPUS
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

Rasheed, Umbreen; Ryu, Hojeong; Mahata, Chandreswar; Khalil, Rana M. Arif; Imran, Muhammad; Rana, Anwar Manzoor; Kousar, Farhana; Kim, Boram; Kim, Yoon; Cho, Seongjae, et al.

ArticleIssue Date2021CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.877PublisherELSEVIER SCIENCE SA
SCOPUS
SEMICONDUCTOR MEMORIES FOR LOW-POWER AND LOW-COMPUTE HARDWARE-ORIENTED ARTIFICIAL INTELLIGENCE SYSTEMopen access

Kim, Soomin; Lee, Yeji; Son, So Won; Kim, Sungjun; Kim, Soo Youn; Kang, Myounggon; Cho, Seongjae

ArticleIssue Date2025CitationProceedings of the 2025 International Conference on Machine Learning and Cybernetics, pp 402 - 406PublisherIEEE
SCIESCOPUS
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devicesopen access

Pyo, Juyeong; Bae, Jong-Ho; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2023CitationMaterials, v.16, no.3, pp 1 - 11PublisherMDPI
SCIESCOPUS
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun, et al.

ArticleIssue Date2023CitationNanoscale, v.15, no.32, pp 13239 - 13251PublisherRoyal Society of Chemistry
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