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SCIESCOPUS
Coexistence of short- and long-term memory in NbOx-based memristor for a nonlinear reservoir computing system

Jang, Heeseong; Heo, Jungang; Park, Jihee; Na, Hyesung; Kim, Sungjun

ArticleIssue Date2025CitationFRONTIERS OF PHYSICS, v.20, no.1, pp 1 - 12PublisherHigher Education Press
SCIESCOPUS
Dual-state conversion for high-entropy and reconfigurable resistive memory-based physically unclonable functionsopen access

Park, Seoyoung; Na, Hyesung; Choi, Jaewoo; Ismail, Muhammad; Mahata, Chandreswar; Ryu, Donghyun; Kim, Sungjoon; Lee, Jung-Kyu; Yu, Junsu; Kim, Sungjun

ArticleIssue Date2026CitationJournal of Materials Science & Technology, v.266, pp 38 - 47PublisherELSEVIER
SCIESCOPUS
Enabling High-Accuracy Neuromorphic Computing via Precise Synaptic Weight Tuning in HfOx-Based 3D Vertical Memristorsopen access

Kim, Nawoon; Park, Jihee; Na, Hyesung; Kim, Sungjun

ArticleIssue Date2025CitationAdvanced Materials Technologies, v.10, no.19PublisherWiley-VCH GmbH
SCIESCOPUS
Enhanced Reliability and Controllability in Filamentary Oxide-Based 3D Vertical Structured Resistive Memory with Pulse Scheme Algorithm for Versatile Neuromorphic Applications

Na, Hyesung; Kim, Sungjun

ArticleIssue Date2025CitationAdvanced Functional Materials, v.35, no.40PublisherWiley-VCH GmbH
SCIESCOPUS
Hybrid WS2-Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive Learningopen access

Ismail, Muhammad; Na, Hyesung; Lee, Youngseo; Rasheed, Maria; Mahata, Chandreswar; Lee, Jung-Kyu; Kim, Sungjun

ArticleIssue Date2025CitationSmall, v.21, no.47PublisherWiley-VCH GmbH
SCIESCOPUS
Improved memory and synaptic device performance of HfO2-based multilayer memristor by inserting oxygen gradient TiOx layer

Park, Jihee; Jang, Heeseong; Byun, Yongjin; Na, Hyesung; Ji, Hyeonseung; Kim, Sungjun

ArticleIssue Date2025CitationChaos, Solitons & Fractals, v.191, pp 1 - 10PublisherElsevier Ltd
SCIESCOPUS
Nonlinear quantized conductance dynamics in vertical SiN RRAM for scalable memory-learning integrationopen access

Park, Jihee; Kim, Nawoon; Na, Hyesung; Kim, Hyungjin; Kim, Sungjun

ArticleIssue Date2026CitationJournal of Materials Science & Technology, v.266, pp 76 - 91PublisherElsevier Ltd
SCIESCOPUS
Photonic Encoding-Driven Neuromorphic and Cryptographic System Based on Oxide Semiconductor Deviceopen access

Park, Hyogeun; Jang, Heesung; Park, Seungman; Na, Hyesung; Kim, Sungjun

ArticleIssue Date2025CitationAdvanced Functional MaterialsPublisherWiley-VCH GmbH
SCIESCOPUS
Stochastic Yet Precise: Memristor Crossbar Arrays Enabling Robust In-Memory Computing, Hardware Security, and Generative Adversarial Networkopen access

Na, Hyesung; Kim, Jung Soo; Kim, Gimun; Choi, Jaewoo; Park, Kang Ryoung; Kim, Sungjun

ArticleIssue Date2025CitationAdvanced Functional MaterialsPublisherWiley-VCH GmbH
SCIESCOPUS
Synaptic metaplasticity and associative learning in low-power neuromorphic computing using W-diffused BaTiO₃ memristorsopen access

Ismail, Muhammad; Na, Hyesung; Rasheed, Maria; Mahata, Chandreswar; Kim, Yoon; Kim, Sungjun

ArticleIssue Date2025CitationNano Energy, v.142, pp 1 - 17PublisherElsevier Ltd
SCIESCOPUS
TiN/TiOx/BaTiO3/Pt heterostructure memristors for adaptive neuromorphic systemsopen access

Ismail, Muhammad; Na, Hyesung; Rasheed, Maria; Mahata, Chandreswar; Kim, Hyun-Seok; Kim, Heung Soo; Moon, Janghyuk; Kim, Sungjun

ArticleIssue Date2025CitationChemical Engineering Journal, v.520, pp 1 - 13PublisherElsevier B.V.
SCIESCOPUS
Universal Neuromorphic Element: NbOx Memristor with Co-Existing Volatile, Non-Volatile, and Threshold Switchingopen access

Byun, Ungbin; Na, Hyesung; Kim, Sungjun

ArticleIssue Date2026CitationAdvanced Functional Materials, v.36, no.15PublisherWiley-VCH GmbH
SCIESCOPUS
ZnO-based resistive memory with self-rectifying behavior for neuromorphic devices

Na, Hyesung; So, Hyojin; Jang, Heesung; Park, Jihee; Kim, Sungjun

ArticleIssue Date2024CitationApplied Surface Science, v.671, pp 1 - 10PublisherElsevier BV
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