ScholarWorks@Dongguk University

IEEE Transactions on Electron Devices

Journal Title

  • IEEE Transactions on Electron Devices

ISSN

  • E 1557-9646 | P 0018-9383

Publisher

  • Institute of Electrical and Electronics Engineers

Listed on(Coverage)

JCR 1997-2023
SJR 1999-2020;2022-2023
CiteScore 2011-2023
SCI 2010-2019
SCIE 2010-2024
CC 2016-2024
SCOPUS 2017-2024

Active

  • Active

    based on the information

    • SCOPUS:2024-10

Country

  • USA

Aime & Scopes

  • IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.

Homepage

Article List

1 - 20 out of 22 results.

SCIESCOPUS
Quantitative Insight of Annealing Atmosphere-Induced Device Performance and Bias Stability in a Ga-Doped InZnSnO Thin-Film Transistors

Choi, Nayoung; Kim, Min Jung; Hong, Hyunmin; Shin, Dong Yeob; Go, Jinyoung; Weldemhret, Teklebrahan Gebrekrstos; Jeong, Kwangsik; Chung, Kwun-Bum

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.9, pp 5393 - 5400PublisherIEEE
SCIESCOPUS
Double Gated a-InGaZnO TFT Properties Based on Quantitative Defect Analysis and Computational Modeling

Hong, Hyunmin; Yi, Dong-Joon; Moon, Yeon-Keon; Son, Kyoung-Seok; Lim, Jun Hyung; Jeong, KwangSik; Chung, Kwun-Bum

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.2, pp 1097 - 1101PublisherIEEE
SCIESCOPUS
Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation

Choi, Jun-Hyeok; Kim, Dohyung; Lee, Seo-Jun; Kim, Ji-Hun; Cho, Yoon-A; Min, Byoung-Gue; Kang, Dong Min; Kim, Hyun-Seok

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.1, pp 468 - 475PublisherIEEE
SCIESCOPUS
Effect of X-Ray Irradiation on Colloidal Quantum Dot SWIR CMOS Image Sensor

Jin, Minhyun; Lee, Sang Yeon; Santos, Pedro; Kang, Jubin; Georgitzikis, Epimitheas; Kim, Joo Hyoung; Genoe, Jan; Kim, Soo Youn; Meynants, Guy; Malinowski, Pawel E., et al.

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.1, pp 613 - 618PublisherIEEE
SCIESCOPUS
Reservoir Computing for Temporal Data Processing Using Resistive Switching Memory Devices Based on ITO Treated With O2 Plasma

Lee, Jung-Kyu; Kwon, Osung; Jeon, Beomki; Kim, Sungjun

ArticleIssue Date2023CitationIEEE Transactions on Electron Devices, v.70, no.11, pp 5651 - 5656PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
In-Situ Investigation of the Gate Bias Instability of Tungsten-Doped Indium Zinc Oxide Thin Film Transistor by Simultaneous Ultraviolet and Thermal Treatment

Kim, Min Jung; Park, Hyun-Woo; Jeong, Kwangsik; Chung, Kwun-Bum

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.8, pp 3851 - 3856PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Hydrogen Behavior in Top Gate Amorphous In-Ga-Zn-O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching

Song, Aeran; Hong, Hyun Min; Son, Kyoung Seok; Lim, Jun Hyung; Chung, Kwun-Bum

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.6, pp 2723 - 2728PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Synaptic Device With High Rectification Ratio Resistive Switching and Its Impact on Spiking Neural Network

Kim, Chae Soo; Kim, Taehyung; Min, Kyung Kyu; Kim, Yeonwoo; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.4, pp 1610 - 1615PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Hong, Kyungho; Kim, Sungjun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp 438 - 442PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Improved Field-Effect Mobility of In-Ga-Zn-O TFTs by Oxidized Metal Layer

Park, Ji-Min; Kim, Hyoung-Do; Jang, Seong Cheol; Kim, Min Jung; Chung, Kwun-Bum; Kim, Yong Joo; Kim, Hyun-Suk

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.11, pp 4924 - 4928PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM

Hong, Kyungho; Min, Kyung Kyu; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Choi, Yeon Joon; Kim, Chae Soo; Lee, Jae Yoon; Kim, Sungjun, et al.

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.4, pp 1600 - 1605PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

Choi, Il Man; Kim, Min Jae; On, Nuri; Song, Aeran; Chung, Kwun-Bum; Jeon, Hoon; Park, Jeong Ki; Jeong, Jae Kyeong

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.3, pp 1014 - 1020PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Cho, Min Hoe; Seol, Hyunju; Song, Aeran; Choi, Seonjun; Song, Yunheub; Yun, Pil Sang; Chung, Kwun-Bum; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.4, pp 1783 - 1788PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Highly Reliable Amorphous In-Ga-Zn-O Thin-Film Transistors Through the Addition of Nitrogen Doping

Park, Kyung; Kim, Jong Heon; Sung, Taehoon; Park, Hyun-Woo; Baeck, Ju-Heyuck; Bae, Jonguk; Park, Kwon-Shik; Yoon, Sooyoung; Kang, Inbyeong; Chung, Kwun-Bum, et al.

ArticleIssue Date2019CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.66, no.1, pp 457 - 463PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Impact of the Metal-Gate Material Properties in FinFET (Versus FD-SOI MOSFET) on High-kappa/Metal Gate Work-Function Variation

Nam, Hyohyun; Shin, Changhwan; Park, Jung-Dong

ArticleIssue Date2018CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.11, pp 4780 - 4785PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Origin of Electrical Instabilities in Self-Aligned Amorphous In-Ga-Zn-O Thin-Film Transistors

On, Nuri; Kang, Youngho; Song, Aeran; Du Ahn, Byung; Kim, Hye Dong; Lim, Jun Hyung; Chung, Kwun-Bum; Han, Seungwu; Jeong, Jae Kyeong

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.12, pp 4965 - 4973PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Effect of Active Layer Thickness on Device Performance of Tungsten-Doped InZnO Thin-Film Transistor

Park, Hyun-Woo; Park, Kyung; Kwon, Jang-Yeon; Choi, Dukhyun; Chung, Kwun-Bum

ArticleIssue Date2017CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.1, pp 159 - 163PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Vertical Tunnel FET: Design Optimization With Triple Metal-Gate Layers

Ko, Eunah; Lee, Hyunjae; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.12, pp 5030 - 5035PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Study of Work-Function Variation in High-kappa/Metal-Gate Gate-All-Around Nanowire MOSFET

Nam, Hyohyun; Lee, Youngtaek; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.8, pp 3338 - 3341PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCISCIESCOPUS
Study of Random Variation in Germanium-Source Vertical Tunnel FET

Lee, Hyunjae; Park, Jung-Dong; Shin, Changhwan

ArticleIssue Date2016CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp 1827 - 1834PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
1 2
CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114

Copyright(c) 2023 DONGGUK UNIVERSITY. ALL RIGHTS RESERVED.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어