ScholarWorks@Dongguk University: Park, Jung dong

Detailed Information

Park, Jung dong (박정동)

College of Engineering (Department of Electronics and Electrical Engineering)

Research Area

Tel 02-2260-3346
Homepage

ResearcherID ORCiD Scopus Google Scholar ID ResearchGate

Keyword

CMOS:19||Wband:5||SiGe:5||power amplifier:4||power amplifier (PA):4||Power generation:3||variability:3||transformer:3||CMOS technology:3||transformers:3||RFIC:3||Characterization:3||workfunction variation (WFV):3||Baluns:3||Power amplifiers:3||Xband:3||random variation:2||UWB antenna:2||6G:2||wideband:2||IQ receiver:2||Voltage:2||Impedance:2||millimeter wave:2||Impedance matching:2||Compressed sensing:2||mutual coupling:2||Gain:2||Capacitors:2||phase shifter:2||phased arrays:2||power amplifiers:2||FMCW:2||power supply rejection ratio:2||Coils:2||tunnel FET (TFET):2||MOSFET:2||LDO:1||LNA:1||Layout:1||Lineedge roughness (LER):1||Linearity:1||Load modeling:1||MIMO:1||MIMO communication:1||Metals:1||Metamaterials:1||Millimeter wave communication:1||Millimeter wave transistors:1||Mixers:1||Mutual coupling:1||Negative Capacitance:1||Optimized production technology:1||Oscillators:1||PRBS generator:1||Periodic structures:1||Power amplifier (PA):1||Power combiners:1||Power measurement:1||Power system harmonics:1||RGG:1||Receiver:1||Resistance:1||SRAM:1||Stability criteria:1||Substrates:1||T/R module:1||T/R switch:1||TFET variability:1||TiO2:1||Transformers:1||Transistors:1||Transmission line measurements:1||True Time Delay:1||Tunnel FET:1||UWB radar:1||VCO:1||Variable Gain Amplifier (VGA):1||Wideband:1||Windings:1||Wireless communication:1||XBand:1||asymmetric cell:1||attenuator:1||bidirectional gain amplifier:1||bidirectional distributed gain amplifier:1||broadband:1||cascaded amplifier:1||complementary metaloxidesemiconductor (CMOS):1||complementary split ring resonator (CSRR):1||compressed sensing:1||deep space exploration:1||driving amplifier (DA):1||electromagnetic bandgap:1||even and odd modes:1||fast transient:1||ferroelectrics:1||fieldenhancing engineering:1||finshaped fieldeffect transistor (FinFET):1||flipped voltage follower:1||frequency hopping:1||frequency multiplier (FM):1||frequency synthesizer:1||frequencymodulated continuouswave (FMCW):1||fully depleted silicononinsulator (FDSOI):1||gain boosting stage:1||gallium nitride (GaN):1||gate material:1||gateallaround (GAA) MOSFET:1||gatelength engineering:1||harmonic rejection ratio (HRR):1||high unitygain bandwidth:1||highpower amplifier (HPA):1||hybrid coupler:1||impedance matching:1||injectionlocked frequency divider (ILFD):1||large loop gain:1||low dropout:1||lowdropout regulator:1||lownoise amplifier (LNA):1||marine radar:1||metaloxidesemiconductor fieldeffect transistor (MOSFET):1||millimeterwave circuits:1||mixerfirst:1||mmwave:1||multiple notches:1||multipleinput multipleoutput (MIMO):1||nanowire MOSFET:1||negative capacitance:1||phase shifters:1||phased array antenna:1||power combining:1||power efficiency:1||radar sensor modeling:1||radarbased sensors:1||radiator:1||random dopant fluctuation (RDF):1||ratio of average grain size to gate area:1||ratio of average grain size to gate area (RGG):1||receiver:1||rectangular complementary split ring resonator (RCSRR):1||rectangular splitring resonator (RSRR):1||regulation:1||rejection bands:1||satellite communication:1||selfresonance frequency (SRF):1||stability analysis:1||steep switching:1||steep switching device:1||steepswitching devices:1||stub loaded resonators:1||subterahertz (THz) amplifier:1||subterahertz amplifier:1||subterahertz (subTHz):1||subthreshold slope:1||terahertz:1||titanium isopropoxide:1||transceiver:1||transceivers:1||transformerbased combiner:1||transmission zeros:1||triband bandpass filter:1||triple metalgate (TMG) tunnel FET (TFET):1||triplewell CMOS:1||truetime delay:1||ultrawideband:1||unmanned surface vehicle (USV):1||upconverter:1||vertical TFET:1||vertical TFET (VTFET):1||wireless:1||workfunction engineering:1||28nm FDSOI:1||yield:1||5G:1||5G mobile communication:1||AllPass Filter:1||Ambipolar current regulation:1||Antenna arrays:1||Antennas:1||Asymmetric cell:1||Atomic layer deposition:1||Balun:1||BiCMOS:1||Bidirectional distributed CMOS:1||Bidirectional distributed gain amplifier:1||Broadband:1||Broadband receiver:1||CML:1||CMOS integrated circuits:1||Circuit faults:1||Circuit stability:1||Common mode:1||Couplings:1||Dband:1||Dielectric resonator antennas:1||Differential amplifiers:1||FMCW radar:1||Ferroelectric:1||Frequency measurement:1||Frequency modulation:1||GaN:1||Gain amplifier:1||Gain boosting stage.:1||Gain enhancement:1||H2O:1||HEMT:1||Harmonic analysis:1||Highspeed switching:1||Internet of things (IoT):1||

RSS_1.0 RSS_2.0 ATOM_1.0

30, Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea+82-2-2260-3114

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

Detailed Information

Keyword

BROWSE