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Effect of active layer thickness on device performance of tungsten-doped InZnO thin-film transistor
- Authors
- 정권범
- Issue Date
- 16-Feb-2017
- Place
- 대한민국
- Conference Name
- 한국진공학회
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)