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Effect of active layer thickness on device performance of tungsten-doped InZnO thin-film transistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2024-10-30T19:04:30Z | - |
| dc.date.available | 2024-10-30T19:04:30Z | - |
| dc.date.issued | 2017-02-16 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/53593 | - |
| dc.title | Effect of active layer thickness on device performance of tungsten-doped InZnO thin-film transistor | - |
| dc.type | Conference | - |
| dc.citation.startPage | 303 | - |
| dc.citation.endPage | 303 | - |
| dc.citation.conferenceName | 한국진공학회 | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)