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Sequential annealing effects of HfSiON gate dielectric films on n-type Ge substrate

Authors
정권범
Issue Date
19-Oct-2016
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/53098
Place
대한민국
Conference Name
한국물리학회
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College of Natural Science > Department of Physics > 2. Conference Papers

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College of Natural Science (Department of Physics)
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