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Sequential annealing effects of HfSiON gate dielectric films on n-type Ge substrate

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dc.contributor.author정권범-
dc.date.accessioned2024-10-30T18:43:36Z-
dc.date.available2024-10-30T18:43:36Z-
dc.date.issued2016-10-19-
dc.identifier.urihttps://scholarworks.dongguk.edu/handle/sw.dongguk/53098-
dc.titleSequential annealing effects of HfSiON gate dielectric films on n-type Ge substrate-
dc.typeConference-
dc.citation.startPage211-
dc.citation.endPage211-
dc.citation.conferenceName한국물리학회-
dc.citation.conferencePlace대한민국-
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College of Natural Science (Department of Physics)
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