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Enhancement of device performance for InGaZnO thin film transistor using the combination of ultra-violet irradiation and low temperature annealing
- Authors
- 정권범
- Issue Date
- 10-Dec-2014
- Place
- 대한민국
- Conference Name
- The 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA)
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)