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Enhancement of device performance for InGaZnO thin film transistor using the combination of ultra-violet irradiation and low temperature annealing
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 정권범 | - |
| dc.date.accessioned | 2024-10-30T15:04:28Z | - |
| dc.date.available | 2024-10-30T15:04:28Z | - |
| dc.date.issued | 2014-12-10 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/50084 | - |
| dc.title | Enhancement of device performance for InGaZnO thin film transistor using the combination of ultra-violet irradiation and low temperature annealing | - |
| dc.type | Conference | - |
| dc.citation.startPage | 53 | - |
| dc.citation.endPage | 53 | - |
| dc.citation.conferenceName | The 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA) | - |
| dc.citation.conferencePlace | 대한민국 | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)