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Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure
- Authors
- Han, Jung Hoon; Shin, Dong Yeob; Sung, Chihun; Cho, Sung Haeng; Ju, Byeong-Kwon; Chung, Kwun-Bum; Nam, Sooji
- Issue Date
- Jun-2024
- Publisher
- John Wiley and Sons Inc
- Keywords
- Al:IZTO; electron trapping; heterojunction; metal-oxide thin film transistors; tellurium; Threshold voltage
- Citation
- Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1452 - 1454
- Pages
- 3
- Indexed
- SCOPUS
- Volume
- 55
- Number
- 1
- Start Page
- 1452
- End Page
- 1454
- ISSN
- 0097-966X
2168-0159
- Abstract
- The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer. © 2024, John Wiley and Sons Inc. All rights reserved.
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Collections - College of Natural Science > Department of Physics > 1. Journal Articles
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)