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Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Jung Hoon | - |
| dc.contributor.author | Shin, Dong Yeob | - |
| dc.contributor.author | Sung, Chihun | - |
| dc.contributor.author | Cho, Sung Haeng | - |
| dc.contributor.author | Ju, Byeong-Kwon | - |
| dc.contributor.author | Chung, Kwun-Bum | - |
| dc.contributor.author | Nam, Sooji | - |
| dc.date.accessioned | 2024-09-26T21:32:19Z | - |
| dc.date.available | 2024-09-26T21:32:19Z | - |
| dc.date.issued | 2024-06 | - |
| dc.identifier.issn | 0097-966X | - |
| dc.identifier.issn | 2168-0159 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/26325 | - |
| dc.description.abstract | The threshold voltage (VT) is the most important parameter in semiconductor devices. To control the VT of the thin-film transistors (TFTs), we propose heterojunction structure of p-type Tellurium (Te) and n-type Aluminum-Doped Indium-Zinc-Tin- Oxide (Al:IZTO) which acts as electron blocking layer and carrier transporting layer, respectively. We investigate the effect of adding the heterojunction layer on the Al:IZTO and demonstrate VT shift up to +20V by adjusting the thickness and single/double deposition of the heterojunction Te layer. © 2024, John Wiley and Sons Inc. All rights reserved. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | John Wiley and Sons Inc | - |
| dc.title | Tailoring the Threshold Voltage Control of Oxide Thin-Film Transistor by Controlling Electron Injection using PN Semiconductor Heterojunction Structure | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1002/sdtp.17824 | - |
| dc.identifier.scopusid | 2-s2.0-85202602809 | - |
| dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.55, no.1, pp 1452 - 1454 | - |
| dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
| dc.citation.volume | 55 | - |
| dc.citation.number | 1 | - |
| dc.citation.startPage | 1452 | - |
| dc.citation.endPage | 1454 | - |
| dc.type.docType | Conference paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | Al:IZTO | - |
| dc.subject.keywordAuthor | electron trapping | - |
| dc.subject.keywordAuthor | heterojunction | - |
| dc.subject.keywordAuthor | metal-oxide thin film transistors | - |
| dc.subject.keywordAuthor | tellurium | - |
| dc.subject.keywordAuthor | Threshold voltage | - |
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)