Modulation of electrical mobility in Au ion irradiated titanium oxide with crystal field splitting

Abstract

Electrical modulation of radio frequency (RF) sputtered TiO2-x films were investigated as a function of Au swift heavy ion irradiation dose at room temperature. The prepared TiO2-x films were irradiated with 130MeV Au swift heavy ion in the range from 1x 10(11) to 5 x 10(12) ions/cm(2). As the Au ion irradiation dose increased up to 1 x 10(12) ions/cm(2), the electrical mobility of TiO2-x films were dramatically increased 3.07 x 10(2) cm(2)V(-1) s(-1) without the change of carrier concentration. These changes in electrical properties of Au irradiated TiO2-x film, are related to the modification of electronic structure such as crystal field splitting of Ti 3d orbital hybridization and sub-band edge states below the conduction band as a function of Au swift heavy ion irradiation dose. (C) 2016 The Japan Society of Applied Physics