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Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access
- Authors
- Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun; Cho, Seongjae
- Issue Date
- Sep-2023
- Publisher
- Royal Society of Chemistry
- Citation
- Nanoscale, v.15, no.34, pp 14267 - 14267
- Pages
- 1
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nanoscale
- Volume
- 15
- Number
- 34
- Start Page
- 14267
- End Page
- 14267
- ISSN
- 2040-3364
2040-3372
- Abstract
- Correction for 'Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems' by Seyeong Yang et al., Nanoscale, 2023, https://doi.org/10.1039/D3NR01930F.
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Related Researcher
- Kim, Sung Jun
- College of Engineering (Department of Electronics and Electrical Engineering)