Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor

Abstract

Resistive switching behavior of sandwiched HfAlO/TiN-NP/HfAlO switching layer demonstrated in this work. Stable 10 3 DC switching cycles achieved after incorporation of TiN-NPs, which were partially ox-idized to form TiOxNy confirmed by X-ray photoelectron spectroscopy. The experiment predicted that TiOxNy/HfAlO interface acts as a weak spot and facilitated the rapture and formation of the conductive filaments. Also, gradual switching behavior between low resistance state and high resistance state im-proved after introducing atomic layer deposited TiN-NPs into the switching layer. Several synaptic prop-erties have been studied, including potentiation/depression under different pulse schemes, spike-time-dependent plasticity, spike-rate-dependent plasticity at the frequency of 2 Hz to 200 Hz, and short-term plasticity under different pulse amplitudes. These properties demonstrated that ITO/HfAlO/TiN-NP/HfAlO/ITO RRAM device is suitable for the neuromorphic application. Light-induced modulation of increasing current and relaxation behavior using a 405 nm laser source further confirms the possibility for light-induced random access memory devices. (C) 2021 Elsevier Ltd. All rights reserved.