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A Fully Si-Compatible Ni/Si3N4/Al2O3/p+ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applicationsopen access

Lee, Yeji; Kim, Soomin; Kim, Seongmin; Shim, Wonbo; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2025CitationACS Omega, v.10, no.47, pp 57476 - 57486PublisherAmerican Chemical Society
SCIESCOPUS
Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computingopen access

Pyo, Juyeong; Jang, Junwon; Ju, Dongyeol; Lee, Subaek; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2023CitationMaterials, v.16, no.20, pp 1 - 11PublisherMDPI
SCIESCOPUS
Effect of interfacial SiO2 layer thickness on the memory performances in the HfAlOx-based ferroelectric tunnel junction for a neuromorphic systemopen access

Park, Yongjin; Kim, Jihyung; Kim, Sunghun; Kim, Dahye; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2023CitationJournal of Materials Chemistry C, v.11, no.40, pp 13886 - 13896PublisherRoyal Society of Chemistry
SCIESCOPUS
Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition

Ismail, Muhammad; Rasheed, Maria; Park, Yongjin; Lee, Sohyeon; Mahata, Chandreswar; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2024CitationThe Journal of Chemical Physics, v.161, no.13, pp 1 - 12PublisherAIP Publishing
SCIESCOPUS
Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction

Lee, Yoonseok; Jeon, Beomki; Cho, Youngboo; Kim, Jihyung; Shim, Wonbo; Kim, Sungjun

ArticleIssue Date2025CitationAdvanced Materials Technologies, v.10, no.4, pp 1 - 17PublisherWiley-VCH GmbH
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