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SCIESCOPUS
Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2021CitationPHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.23, no.48, pp 27234 - 27243PublisherROYAL SOC CHEMISTRY
SCIESCOPUS
Correction: Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun, et al.

ArticleIssue Date2023CitationNanoscale, v.15, no.34, pp 14267 - 14267PublisherRoyal Society of Chemistry
SCIESCOPUS
Demonstration of Synaptic Characteristics in VRRAM with TiN Nanocrystals for Neuromorphic Systemopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Kim, Sungjoon; Kim, Tae-Hyeon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun; Cho, Seongjae

ArticleIssue Date2023CitationAdvanced Materials Interfaces, v.10, no.21PublisherWiley-VCH GmbH
SCIESCOPUS
Effect of Ag source layer thickness on the switching mechanism of TiN/Ag/SiN (x) /TiN conductive bridging random access memory observed at sub-mu A current

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Hong, Kyungho; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2021CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Electric-Field-Induced Metal Filament Formation in Cobalt-Based CBRAM Observed by TEMopen access

Choi, Yeon-Joon; Bang, Suhyun; Kim, Tae-Hyeon; Hong, Kyungho; Kim, Sungjoon; Kim, Sungjun; Park, Byung-Gook; Choi, Woo Young

ArticleIssue Date2023CitationACS Applied Electronic Materials, v.5, no.3, pp 1834 - 1843PublisherAmerican Chemical Society
SCIESCOPUS
Energy Efficient Hybrid Reservoir Computing Using Hfn.5Zrn.5O2 Ferroelectric Thin-Film Transistors with an Integrated Optically and Electrically Synaptic Functionsopen access

Lee, Seungjun; An, Gwangmin; Kim, Doohyung; Lee, Hyeonho; Kim, Sungjun; Kim, Tae-Hyeon

ArticleIssue Date2025CitationSmall, v.21, no.32PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
Fabrication and Characterization of TiOx Memristor for Synaptic Device Application

Kim, Tae-Hyeon; Kim, Min-Hwi; Bang, Suhyun; Lee, Dong Keun; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON NANOTECHNOLOGY, v.19, pp 475 - 480PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
HfOx-based nano-wedge structured resistive switching memory device operating at sub-mu A current for neuromorphic computing application

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationSEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.5PublisherIOP PUBLISHING LTD
SCIESCOPUS
Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM

Park, Jongmin; Kim, Tae-Hyeon; Kwon, Osung; Ismail, Muhammad; Mahata, Chandreswar; Kim, Yoon; Kim, Sangbum; Kim, Sungjun

ArticleIssue Date2022CitationNano Energy, v.104, pp 1 - 10PublisherElsevier BV
SCIESCOPUS
Improved rectification characteristics by engineering energy barrier height in TiOx-based RRAM

Kim, Tae-Hyeon; Kim, Sungjun; Park, Byung-Gook

ArticleIssue Date2021CitationMICROELECTRONIC ENGINEERING, v.237PublisherELSEVIER
SCIESCOPUS
Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Choi, Yeon-Joon; Hong, Kyungho; Kim, Sungjun; Cho, Seongjae; Lee, Jong-Ho; Park, Byung-Gook

ArticleIssue Date2021CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.1, pp 438 - 442PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulationopen access

Choi, Yeon-Joon; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Hong, Kyungho; Kim, Chae Soo; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 228720 - 228730PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM

Hong, Kyungho; Min, Kyung Kyu; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Lee, Dong Keun; Choi, Yeon Joon; Kim, Chae Soo; Lee, Jae Yoon; Kim, Sungjun, et al.

ArticleIssue Date2020CitationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.4, pp 1600 - 1605PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Applicationopen access

Lee, Dong Keun; Kim, Min-Hwi; Bang, Suhyun; Kim, Tae-Hyeon; Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook

ArticleIssue Date2020CitationELECTRONICS, v.9, no.8, pp 1 - 8PublisherMDPI
SCIESCOPUS
Nanolaminate Ferroelectric Transistor Enabling Wide-Reservoir In Sensor Neuromorphic Visionopen access

An, Gwangmin; Lee, Seungjun; Lee, Hyeonho; Kim, Gimun; Kim, Tae-Hyeon; Kim, Heung Soo; Chai, Yang; Kim, Sungjun

ArticleIssue Date2026CitationAdvanced Materials, v.38, no.15PublisherWiley-VCH GmbH
SCIESCOPUS
Synaptic Characteristics and Vector-Matrix Multiplication Operation in Highly Uniform and Cost-Effective Four-Layer Vertical RRAM Array

Kim, Jihyung; Lee, Subaek; Kim, Sungjoon; Yang, Seyoung; Lee, Jung-Kyu; Kim, Tae-Hyeon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Yoon; Choi, Woo Young, et al.

ArticleIssue Date2024CitationAdvanced Functional Materials, v.34, no.8PublisherWiley-VCH GmbH
SCIESCOPUS
Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systemsopen access

Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun, et al.

ArticleIssue Date2023CitationNanoscale, v.15, no.32, pp 13239 - 13251PublisherRoyal Society of Chemistry
SCIESCOPUS
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineeringopen access

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Ismail, Muhammad; Mahata, Chandreswar; Oh, Teresa; Imran, Muhammad; Min, Kyung Kyu; Kim, Tae-Hyeon; Yang, Byung-Do, et al.

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 130678 - 130686PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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