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SCIESCOPUS
ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr(1-x)M(x)O(3) (A = Ba, Ca, Sr; M = Al, Cu, x=0.25) for application of memory devices

Khera, Ejaz Ahmad; Ullah, Hafeez; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Resheed, Umbreen; Rana, Anwar Manzoor; Hussain, Muhammad Iqbal; Mahata, Chandreswar, et al.

ArticleIssue Date2021CitationJOURNAL OF MOLECULAR GRAPHICS & MODELLING, v.103PublisherELSEVIER SCIENCE INC
SCIESCOPUS
First principle investigation of polaronic resistive switching behavior in titania based memristors with different charge states

Kousar, Farhana; Rasheed, Umbreen; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Sattar, M. Atif; Ashiq, Muhammad Naeem; Rana, Anwar Manzoor; Mahata, Chandreswar

ArticleIssue Date2021CitationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.134PublisherELSEVIER
SCIESCOPUS
Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational studyopen access

Khera, Ejaz Ahmad; Mahata, Chandreswar; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Rasheed, Umbreen; SungjunKim

ArticleIssue Date2022CitationRSC Advances, v.12, no.19, pp 11649 - 11656PublisherRoyal Society of Chemistry
SCIESCOPUS
Investigations of structural, electronic and optical properties of YInO3 (Y = Rb, Cs, Fr) perovskite oxides using mBJ approximation for optoelectronic applications: A first principles study

Hussain, Muhammad Iqbal; Khalil, R. M. Arif; Hussain, Fayyaz; Imran, Muhammad; Rana, Anwar Manzoor; Kim, Sungjun

ArticleIssue Date2020CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.113PublisherELSEVIER SCI LTD
SCIESCOPUS
Phytochemical constituents, biological activities, and health-promoting effects of the genusOriganum

Sharifi-Rad, Mehdi; Yilmaz, Yakup Berkay; Antika, Gizem; Salehi, Bahare; Tumer, Tugba Boyunegmez; Venil, Chidambaram Kulandaisamy; Das, Gitishree; Patra, Jayanta Kumar; Karazhan, Natallia; Akram, Muhammad, et al.

ArticleIssue Date2021CitationPHYTOTHERAPY RESEARCH, v.35, no.1, pp 95 - 121PublisherWILEY
SCIESCOPUS
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

Rasheed, Umbreen; Ryu, Hojeong; Mahata, Chandreswar; Khalil, Rana M. Arif; Imran, Muhammad; Rana, Anwar Manzoor; Kousar, Farhana; Kim, Boram; Kim, Yoon; Cho, Seongjae, et al.

ArticleIssue Date2021CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.877PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Sequential Co-Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near-Infrared Photodetectorsopen access

Xia, Pan; Sun, Bin; Biondi, Margherita; Xu, Jian; Atan, Ozan; Imran, Muhammad; Hassan, Yasser; Liu, Yanjiang; Pina, Joao M.; Najarian, Amin Morteza, et al.

ArticleIssue Date2023CitationAdvanced Materials, v.35, no.28PublisherWiley-VCH GmbH
SCIESCOPUS
Structural, electronic and optical properties of transition metal doped Hf 1-x TM x O 2 (TM = Co, Ni and Zn) using modi fied TB-mBJ potential for optoelectronic memristors devices

Khera, Ejaz Ahmad; Ullah, Hafeez; Imran, Muhammad; Niaz, N. A.; Hussain, Fayyaz; Khalil, R. M. Arif; Rasheed, Umbreen; Sattar, M. Atif; Iqbal, Fasial; Mahta, Chandreswar, et al.

ArticleIssue Date2020CitationOPTIK, v.212PublisherELSEVIER GMBH
SCIESCOPUS
Theoretical expolartion of site selective Perovskites for the application of electronic and optoresponsive memory devicesopen access

Rasheed, Umbreen; Imran, Muhammad; ArifKhalil, R.M.; Ashiq, Muhammad Naeem; Mahata, Chandreswar; Hussain, Fayyaz

ArticleIssue Date2023CitationPhysica E: Low-dimensional Systems and Nanostructures, v.145, pp 1 - 9PublisherELSEVIER
SCIESCOPUS
Towards Pattern-Based Change Verification Framework for Cloud-Enabled Healthcare Component-Basedopen access

Ali, Sadia; Hafeez, Yaser; Jhanjhi, N. Z.; Humayun, Mamoona; Imran, Muhammad; Nayyar, Anand; Singh, Saurabh; Ra, In-Ho

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 148007 - 148020PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
SCIESCOPUS
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineeringopen access

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Ismail, Muhammad; Mahata, Chandreswar; Oh, Teresa; Imran, Muhammad; Min, Kyung Kyu; Kim, Tae-Hyeon; Yang, Byung-Do, et al.

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 130678 - 130686PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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