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SCIESCOPUS
ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr(1-x)M(x)O(3) (A = Ba, Ca, Sr; M = Al, Cu, x=0.25) for application of memory devices

Khera, Ejaz Ahmad; Ullah, Hafeez; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Resheed, Umbreen; Rana, Anwar Manzoor; Hussain, Muhammad Iqbal; Mahata, Chandreswar, et al.

ArticleIssue Date2021CitationJOURNAL OF MOLECULAR GRAPHICS & MODELLING, v.103PublisherELSEVIER SCIENCE INC
SCIESCOPUS
Bio-inspired synaptic functions from a transparent zinc-tin-oxide-based memristor for neuromorphic engineering

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Ismail, Muhammad; Kim, Yoon; Kim, Sungjun

ArticleIssue Date2021CitationAPPLIED SURFACE SCIENCE, v.544PublisherELSEVIER
SCIESCOPUS
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

Ryu, Ji-Ho; Hussain, Fayyaz; Mahata, Chandreswar; Ismail, Muhammad; Abbas, Yawar; Kim, Min-Hwi; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationAPPLIED SURFACE SCIENCE, v.529PublisherELSEVIER
SCIESCOPUS
First principle investigation of polaronic resistive switching behavior in titania based memristors with different charge states

Kousar, Farhana; Rasheed, Umbreen; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Sattar, M. Atif; Ashiq, Muhammad Naeem; Rana, Anwar Manzoor; Mahata, Chandreswar

ArticleIssue Date2021CitationPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.134PublisherELSEVIER
SCIESCOPUS
Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational studyopen access

Khera, Ejaz Ahmad; Mahata, Chandreswar; Imran, Muhammad; Niaz, Niaz Ahmad; Hussain, Fayyaz; Khalil, R. M. Arif; Rasheed, Umbreen; SungjunKim

ArticleIssue Date2022CitationRSC Advances, v.12, no.19, pp 11649 - 11656PublisherRoyal Society of Chemistry
SCIESCOPUS
Investigations of structural, electronic and optical properties of YInO3 (Y = Rb, Cs, Fr) perovskite oxides using mBJ approximation for optoelectronic applications: A first principles study

Hussain, Muhammad Iqbal; Khalil, R. M. Arif; Hussain, Fayyaz; Imran, Muhammad; Rana, Anwar Manzoor; Kim, Sungjun

ArticleIssue Date2020CitationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.113PublisherELSEVIER SCI LTD
SCIESCOPUS
Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrateopen access

Rahmani, Mehr Khalid; Kim, Min-Hwi; Hussain, Fayyaz; Abbas, Yawar; Ismail, Muhammad; Hong, Kyungho; Mahata, Chandreswar; Choi, Changhwan; Park, Byung-Gook; Kim, Sungjun

ArticleIssue Date2020CitationNANOMATERIALS, v.10, no.5PublisherMDPI
SCIESCOPUS
Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layersopen access

Khan, Sobia Ali; Hussain, Fayyaz; Chung, Daewon; Rahmani, Mehr Khalid; Ismail, Muhammd; Mahata, Chandreswar; Abbas, Yawar; Abbas, Haider; Choi, Changhwan; Mikhaylov, Alexey N., et al.

ArticleIssue Date2022CitationMicromachines, v.13, no.9, pp 1 - 10PublisherMDPI
SCIESCOPUS
Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications

Rasheed, Umbreen; Ryu, Hojeong; Mahata, Chandreswar; Khalil, Rana M. Arif; Imran, Muhammad; Rana, Anwar Manzoor; Kousar, Farhana; Kim, Boram; Kim, Yoon; Cho, Seongjae, et al.

ArticleIssue Date2021CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.877PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Structural, electronic and optical properties of transition metal doped Hf 1-x TM x O 2 (TM = Co, Ni and Zn) using modi fied TB-mBJ potential for optoelectronic memristors devices

Khera, Ejaz Ahmad; Ullah, Hafeez; Imran, Muhammad; Niaz, N. A.; Hussain, Fayyaz; Khalil, R. M. Arif; Rasheed, Umbreen; Sattar, M. Atif; Iqbal, Fasial; Mahta, Chandreswar, et al.

ArticleIssue Date2020CitationOPTIK, v.212PublisherELSEVIER GMBH
SCIESCOPUS
Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering

Lee, Jinju; Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Mahata, Chandreswar; Sim, Eunjin; Ismail, Muhammad; Abbas, Yawar; Abbas, Haider; Lee, Dong Keun, et al.

ArticleIssue Date2020CitationACS APPLIED MATERIALS & INTERFACES, v.12, no.30, pp 33908 - 33916PublisherAMER CHEMICAL SOC
SCIESCOPUS
Theoretical expolartion of site selective Perovskites for the application of electronic and optoresponsive memory devicesopen access

Rasheed, Umbreen; Imran, Muhammad; ArifKhalil, R.M.; Ashiq, Muhammad Naeem; Mahata, Chandreswar; Hussain, Fayyaz

ArticleIssue Date2023CitationPhysica E: Low-dimensional Systems and Nanostructures, v.145, pp 1 - 9PublisherELSEVIER
SCIESCOPUS
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineeringopen access

Ryu, Ji-Ho; Kim, Boram; Hussain, Fayyaz; Ismail, Muhammad; Mahata, Chandreswar; Oh, Teresa; Imran, Muhammad; Min, Kyung Kyu; Kim, Tae-Hyeon; Yang, Byung-Do, et al.

ArticleIssue Date2020CitationIEEE ACCESS, v.8, pp 130678 - 130686PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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