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Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping
- Authors
- Sung, T.; Park, K.; Kim, J.H.; Park, H.-W.; Yun, P.; Non, J.; Lee, S.; Park, K.-S.; Yoon, S.; Kang, I.; Chung, K.-B.; Kim, H.-S.; Kwon, J.-Y.
- Issue Date
- 2018
- Publisher
- International Display Workshops
- Keywords
- IGZO; Nitrogen; Reliability
- Citation
- Proceedings of the International Display Workshops, v.1, pp 287 - 290
- Pages
- 4
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 1
- Start Page
- 287
- End Page
- 290
- ISSN
- 1883-2490
- Abstract
- Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment. © 2018 International Display Workshops. All rights reserved.
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Collections - College of Natural Science > Department of Physics > 1. Journal Articles
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)