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Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS
- Authors
- Yunusov, Z. A.; Yuldashev, Sh. U.; Kwon, Y. H.; Kim, D. Y.; Lee, S. J.; Jeon, H. C.; Jung, H.; Kim, A.; Kang, T. W.
- Issue Date
- 15-Jan-2018
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Diluted magnetic semiconductors (DMS); ZnO; ZnS alloy; Room temperature ferromagnetism
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.446, pp 206 - 209
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 446
- Start Page
- 206
- End Page
- 209
- ISSN
- 0304-8853
1873-4766
- Abstract
- In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn-1 xMnxO1 S-y(y) thin films with manganese x = 0.05 and sulfur 0 <= y <= 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration. (C) 2017 Elsevier B.V. All rights reserved.
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Related Researcher
- Jung, Hyun
- College of Natural Science (Department of Chemistry)