Band gap engineering of ZnMnO diluted magnetic semiconductor by alloying with ZnS

Abstract

In this paper we report the results on the fabrication of diluted magnetic semiconductors Zn-1 xMnxO1 S-y(y) thin films with manganese x = 0.05 and sulfur 0 <= y <= 0.15 compositions, respectively, by using ultrasonic spray pyrolysis method. The influence of the sulfur concentration on the band gap energy, structural and magnetic properties have been studied by using optical transmission, X-ray diffraction and superconducting quantum interference device (SQUID) measurements, respectively. The morphology and composition of samples were studied by using Scanning Electron Microscope (SEM) and X-ray photoelectron spectroscopy (XPS). With increasing of the sulfur concentration the band gap energy of composition decreases, while the magnetization increases proportional to the sulfur concentration. (C) 2017 Elsevier B.V. All rights reserved.