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An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response
- Authors
- Ahn, Il-Ho; Kyhm, Jihoon; Lee, Juwon; Cho, Sangeun; Jo, Yongcheol; Kim, Deuk Young; Choi, Soo Ho; Yang, Woochul
- Issue Date
- Apr-2019
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Photocurrent transient measurement; Variable-magnetic-field Hall measurement; Mobility spectrum analysis
- Citation
- CURRENT APPLIED PHYSICS, v.19, no.4, pp 498 - 502
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 19
- Number
- 4
- Start Page
- 498
- End Page
- 502
- ISSN
- 1567-1739
1878-1675
- Abstract
- We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA.
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)