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An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ahn, Il-Ho | - |
| dc.contributor.author | Kyhm, Jihoon | - |
| dc.contributor.author | Lee, Juwon | - |
| dc.contributor.author | Cho, Sangeun | - |
| dc.contributor.author | Jo, Yongcheol | - |
| dc.contributor.author | Kim, Deuk Young | - |
| dc.contributor.author | Choi, Soo Ho | - |
| dc.contributor.author | Yang, Woochul | - |
| dc.date.accessioned | 2023-04-28T04:41:42Z | - |
| dc.date.available | 2023-04-28T04:41:42Z | - |
| dc.date.issued | 2019-04 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.issn | 1878-1675 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/8250 | - |
| dc.description.abstract | We report here a simple alternative method for measuring charge carrier drift mobilities in semiconductor devices. A typical falling photocurrent transient formula for switch-off-state was adjusted to obtain simultaneously electron and hole mobilities. For both undoped ZnO film and InAlAs/InGaAs quantum well structure, electron mobilities extracted from our model were compared with those obtained from maximum-entropy mobility-spectrum analysis method (ME-MSA). Our results demonstrated that electron mobility obtained from our photocurrent response model could serve as substitutes for a representative mobility obtained from ME-MSA. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | An alternative method for measurement of charge carrier mobility in semiconductors using photocurrent transient response | - |
| dc.type | Article | - |
| dc.publisher.location | 네델란드 | - |
| dc.identifier.doi | 10.1016/j.cap.2019.02.002 | - |
| dc.identifier.scopusid | 2-s2.0-85060943056 | - |
| dc.identifier.wosid | 000459782100024 | - |
| dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.19, no.4, pp 498 - 502 | - |
| dc.citation.title | CURRENT APPLIED PHYSICS | - |
| dc.citation.volume | 19 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 498 | - |
| dc.citation.endPage | 502 | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART002458464 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | SPECTRUM ANALYSIS | - |
| dc.subject.keywordPlus | MAGNETOTRANSPORT CHARACTERIZATION | - |
| dc.subject.keywordAuthor | Photocurrent transient measurement | - |
| dc.subject.keywordAuthor | Variable-magnetic-field Hall measurement | - |
| dc.subject.keywordAuthor | Mobility spectrum analysis | - |
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Related Researcher
- Yang, Woo Chul
- College of Natural Science (Department of Physics)