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Synaptic characteristics of Bottom- Gated Phototransistors with Indium- Gallium-Zinc-Oxide Active Layers as a function of oxygen partial pressure
- Authors
- 정권범
- Issue Date
- 26-May-2025
- Place
- 프랑스
- Conference Name
- European Materials Research Society (EMRS)
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Collections - College of Natural Science > Department of Physics > 2. Conference Papers
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Related Researcher
- Chung, Kwun Bum
- College of Natural Science (Department of Physics)