Fabrication of New Trench Gate MOSFET Devices

주해종

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Fabrication of New Trench Gate MOSFET Devices

Authors: 주해종

Issue Date: 10-Nov-2017

URI: https://scholarworks.dongguk.edu/handle/sw.dongguk/53711

Place: 대한민국

Conference Date: 2017-11-09 ~ 2017-11-11

Conference Name: Proceeding of The 3th International Conference on BICTA 2017

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Appears in Collections: College of Engineering > Division of Computer and Telecommunication Engineering > 2. Conference Papers

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