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Fabrication of New Trench Gate MOSFET Devices
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 주해종 | - |
| dc.date.accessioned | 2024-10-30T19:23:49Z | - |
| dc.date.available | 2024-10-30T19:23:49Z | - |
| dc.date.issued | 2017-11-10 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/53711 | - |
| dc.title | Fabrication of New Trench Gate MOSFET Devices | - |
| dc.type | Conference | - |
| dc.citation.startPage | 18 | - |
| dc.citation.endPage | 19 | - |
| dc.citation.conferenceName | Proceeding of The 3th International Conference on BICTA 2017 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferenceDate | 2017-11-09 ~ 2017-11-11 | - |
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