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Normally-off AlGaN/GaN HEMT with high breakdown voltage using recessed T-gate drain-field-plate (TGDFP) technology for RF power applications
- Authors
- 박현창
- Issue Date
- 10-Jul-2013
- Place
- 대한민국
Coex
- Conference Date
- 2013-07-10 ~ 2013-07-12
- Conference Name
- NANO KOREA 2013
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Related Researcher
- Park, Hyun Chang
- College of Engineering (Department of Electronics and Electrical Engineering)