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Normally-off AlGaN/GaN HEMT with high breakdown voltage using recessed T-gate drain-field-plate (TGDFP) technology for RF power applications
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박현창 | - |
| dc.date.accessioned | 2024-10-30T13:23:41Z | - |
| dc.date.available | 2024-10-30T13:23:41Z | - |
| dc.date.issued | 2013-07-10 | - |
| dc.identifier.uri | https://scholarworks.dongguk.edu/handle/sw.dongguk/48535 | - |
| dc.title | Normally-off AlGaN/GaN HEMT with high breakdown voltage using recessed T-gate drain-field-plate (TGDFP) technology for RF power applications | - |
| dc.type | Conference | - |
| dc.citation.startPage | 3 | - |
| dc.citation.endPage | 4 | - |
| dc.citation.conferenceName | NANO KOREA 2013 | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | Coex | - |
| dc.citation.conferenceDate | 2013-07-10 ~ 2013-07-12 | - |
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Related Researcher
- Park, Hyun Chang
- College of Engineering (Department of Electronics and Electrical Engineering)