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Modulation Effects of AlN buffer layers on the structural and optical properties ofGaN epilayers grown on Al2O3 substrates by plasma-assisted molecular-beam epitaxy

Authors
전희창
Issue Date
25-Jul-2011
URI
https://scholarworks.dongguk.edu/handle/sw.dongguk/45067
Place
미국
Conference Name
15th conference on Modulated Semiconductor Structures
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